BAT48 vs BAT43-R0 Comparación
Comparación detallada lado a lado de BAT48 por STMicroelectronics y BAT43-R0 por Taiwan Semiconductor. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
BAT48 - 40V 350mA Small-Signal Schottky Diode | STMicroelectronics
BAT48 ✓ ActivoTaiwan Semiconductor
BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor
BAT43-R0 ✓ ActivoComparación de especificaciones
| Parámetro | BAT48 | BAT43-R0 |
|---|---|---|
| Marca | STMicroelectronics | Taiwan Semiconductor |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,02 |
| Diode Type | Small-signal Schottky barrier diode | Small Signal Schottky Barrier |
| Reverse Voltage (VRRM) | 40 V | — |
| Average Forward Current (IF(AV)) | 350 mA | 200 mA |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | — |
| Reverse Recovery Time (Trr) | approx. 5 ns (per web source data) | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Turn-On Voltage Feature | Very low turn-on voltage | — |
| Switching Speed | Fast switching | — |
| ESD Protection | Integrated PN junction guard ring | Fast guard ring against excessive voltage (ESD) |
| Encapsulado | DO-35 (axial, through-hole, glass) | DO-35 axial glass (through hole) |
| Series Packages | SOD-123, SOD-323, DO-35 | — |
| Tipo de montaje | Through Hole | Through Hole |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Application | General purpose, low turn-on, fast switching | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Polarity Marking | Cathode band (per DO-35 convention) | — |
| Repetitive Peak Reverse Voltage (VRRM) | — | 30 V |
| Maximum Forward Voltage (VF) | — | 1 V |
| Non-Repetitive Peak Forward Surge Current (IFSM) | — | 4 A |
| Power Dissipation | — | 200 mW |
| Junction Operating Temperature | — | -65C to +125C |
| Reverse Recovery | — | Fast switching (Schottky, majority carrier) |
| Configuration | — | Single diode |
| Forward Voltage Turn-On | — | Very low turn-on voltage |
| Capacitance (Cj) | — | [DATA_NEEDED: junction capacitance] |
| Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Packaging Type | — | [DATA_NEEDED: tape/reel or bulk option] |