BAT48 vs BAT43-R0 비교

다음의 상세 나란히 비교: BAT48 제조: STMicroelectronics 및 BAT43-R0 제조: Taiwan Semiconductor. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Taiwan Semiconductor
BAT43-R0 BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor

BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor

BAT43-R0 ✓ 활성

사양 비교

파라미터 BAT48 BAT43-R0
브랜드 STMicroelectronics Taiwan Semiconductor
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.00 $0.02
Diode Type Small-signal Schottky barrier diode Small Signal Schottky Barrier
Reverse Voltage (VRRM) 40 V —
Average Forward Current (IF(AV)) 350 mA 200 mA
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] —
Reverse Recovery Time (Trr) approx. 5 ns (per web source data) —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Turn-On Voltage Feature Very low turn-on voltage —
Switching Speed Fast switching —
ESD Protection Integrated PN junction guard ring Fast guard ring against excessive voltage (ESD)
패키지 DO-35 (axial, through-hole, glass) DO-35 axial glass (through hole)
Series Packages SOD-123, SOD-323, DO-35 —
실장 유형 Through Hole Through Hole
동작 온도 [DATA_NEEDED: operating temperature range] —
Application General purpose, low turn-on, fast switching —
RoHS 상태 [DATA_NEEDED: RoHS status] Compliant
Polarity Marking Cathode band (per DO-35 convention) —
Repetitive Peak Reverse Voltage (VRRM) — 30 V
Maximum Forward Voltage (VF) — 1 V
Non-Repetitive Peak Forward Surge Current (IFSM) — 4 A
Power Dissipation — 200 mW
Junction Operating Temperature — -65C to +125C
Reverse Recovery — Fast switching (Schottky, majority carrier)
Configuration — Single diode
Forward Voltage Turn-On — Very low turn-on voltage
Capacitance (Cj) — [DATA_NEEDED: junction capacitance]
Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Packaging Type — [DATA_NEEDED: tape/reel or bulk option]

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