BSC010NE2LSIATMA1 vs BSC014NE2LSIATMA1 Comparación
Comparación detallada lado a lado de BSC010NE2LSIATMA1 por Infineon y BSC014NE2LSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC010NE2LSIATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,92 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Series / Family | OptiMOS 25V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA | 38 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 96 W | — |
| Encapsulado | PG-TDSON-8-7 (TDSON-8 EP) | PG-TDSON-8-7 (SuperSO8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | OptiMOS (Trench) | N-Channel MOSFET (OptiMOS 25V) |
| Rango de temperatura de funcionamiento | -55C to +150C (TJ) | — |
| Recuento de pines | 8 | — |
| Estado RoHS | Compliant | Compliant |
| Gate Drive | Logic-level compatible | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | — |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 33 A |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 74 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +150 °C |
| Lead-Free | — | Yes |