BSC011N03LSIATMA1 vs BSC014N06NSATMA1 Comparación
Comparación detallada lado a lado de BSC011N03LSIATMA1 por Infineon y BSC014N06NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
BSC011N03LSIATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | BSC011N03LSIATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,32 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 30 V | OptiMOS 5 |
| Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 37 A | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) at VGS=10V | 1.1 mΩ (typical) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 96 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +150 °C | — |
| Encapsulado | PG-TDSON-8-7 (Surface Mount) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 |
| Estado RoHS | Compliant | Compliant |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID) at Ta | — | 30 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.45 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 156 W |
| Rango de temperatura de funcionamiento | — | -55C to +150C |
| Technology | — | OptiMOS 5 (shielded-gate trench) |