BSC019N08NS5ATMA1 vs BSC0901NSIATMA1 Comparación
Comparación detallada lado a lado de BSC019N08NS5ATMA1 por Infineon y BSC0901NSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC019N08NS5ATMA1 | BSC0901NSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,78 | $0,38 |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 25V N-Channel Power MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TA=25C | 28 A | — |
| Continuous Drain Current (ID) at TC=25C | 237 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 214 W | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C | -55 C to +150 C |
| Encapsulado | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 | 1 |
| Estado RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-State Resistance (RDS(on)) at VGS=10V | — | 2.0 mOhm typical |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.2 V max |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge nC] |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 69 W |
| Recuento de pines | — | 8 |
| Sin halógenos | — | Yes |