BSC019N08NS5ATMA1 vs BSC0901NSIATMA1 Comparison

Detailed side-by-side comparison of BSC019N08NS5ATMA1 by Infineon and BSC0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0901NSIATMA1 BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon

BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon

BSC0901NSIATMA1 ✓ Active

Specification Comparison

Parameter BSC019N08NS5ATMA1 BSC0901NSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Technology OptiMOS 5 (N-channel trench) OptiMOS 25V N-Channel Power MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS) max 80 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at TA=25C 28 A —
Continuous Drain Current (ID) at TC=25C 237 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 1.9 mOhm —
Gate Threshold Voltage VGS(th) typ 3.0 V —
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 214 W —
Operating Temperature Range -55 C to +150 C -55 C to +150 C
Package PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-6 (5x6 mm with exposed pad)
Mounting Type Surface Mount Surface Mount
MSL Level 1 1
RoHS Status Compliant Compliant
Avalanche Rated Yes —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 28 A
Continuous Drain Current (ID) at Tc — 100 A
On-State Resistance (RDS(on)) at VGS=10V — 2.0 mOhm typical
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage (VGS(th)) — 2.2 V max
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge nC]
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc — 69 W
Pin Count — 8
Halogen Free — Yes

Datasheets & Resources

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