BSC021N08NS5ATMA1 vs BSC059N04LS6ATMA1 Comparación
Comparación detallada lado a lado de BSC021N08NS5ATMA1 por Infineon y BSC059N04LS6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC021N08NS5ATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,81 | $0,74 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC021N08NS5ATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (V_DS max) | 80 V | — |
| Continuous Drain Current (I_D, Tc=25°C) | 226 A | — |
| Continuous Drain Current (I_D, Tc=100°C) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΩ | — |
| Gate-Source Voltage V_GS max | ±20 V | — |
| Power Dissipation P_D (Tc=25°C) | 214 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | SuperSO8 5x6 (PG-TSON-8-3) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Total Gate Charge Q_G typ | [DATA_NEEDED: total gate charge] | — |
| R_thJC thermal resistance max | [DATA_NEEDED: R_thJC] | — |
| Estado RoHS | Compliant (Pb-free) | Compliant |
| Nivel MSL | MSL 1 (per JEDEC J-STD-020) | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Delivery Form | Tape & Reel (T&R) | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25C | — | 17 A |
| Continuous Drain Current (ID) at TC=25C | — | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | — | 59 A |
| On-Resistance RDS(on) max | — | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | — | 3 W |
| Total Power Dissipation at TC=25C | — | 38 W |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Rango de temperatura de funcionamiento | — | -55C to +150C |
| Diode Continuous Forward Current (IS) | — | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | — | 236 A at TC=25C |
| Lead-Free | — | Yes |