BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon
N.º de pieza: BSC059N04LS6ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.28 | $128,00 |
| 500 | $1.05 | $525,00 |
| 1.000 | $0.89 | $890,00 |
| 3.000 | $0.74 | $2.220,00 |
BSC059N04LS6ATMA1 Descripción general
Key features include a 40 V drain-source breakdown voltage, 5.9 mOhm maximum RDS(on) at VGS=10 V, continuous drain current of 17 A at TA=25C (49 A at TC=25C), pulsed drain current of 59 A at TC=25C, total power dissipation of 3 W at TA=25C and 38 W at TC=25C, and an avalanche-rated body diode for rugged switching transitions. The OptiMOS 6 technology delivers improved Figure of Merit (FOM = RDS(on) x Qg) versus prior generations, enabling higher power density in switched-mode power supplies.
The OptiMOS 6 40V power MOSFET family is optimized for synchronous rectification in switched mode power supplies (SMPS) in servers, desktops, and telecom bricks, as well as for DC-DC converters, battery management systems (BMS), motor drives, and OR-ing functions. The SuperSO8 package provides an exposed pad that lowers thermal resistance to the PCB copper pour, supporting 38 W dissipation at 25C case temperature with proper board layout.
Compared to the earlier OptiMOS 5 generation, OptiMOS 6 reduces switching losses by approximately 20% through optimized gate charge (Qg) and output capacitance (Coss) characteristics, while maintaining the same 40 V voltage class. This makes the part particularly attractive for high-frequency (>300 kHz) buck and synchronous rectification stages where switching loss dominates total power dissipation.
Typical applications include synchronous rectification in server and telecom SMPS, 12 V and 24 V DC-DC point-of-load converters, hot-swap and OR-ing controllers, battery protection and load switching in BMS, and low-voltage motor drive half-bridges. The 5.9 mOhm RDS(on) minimizes conduction loss in high-current 12 V rails.
When designing with this device, keep the gate-source voltage below the 20 V VGS(max) rating and provide adequate copper pour (typically 1 in2 minimum) to keep thermal resistance within budget. Use a gate driver with sufficient source/sink current (typically >1 A peak) to fully exploit the switching speed advantage of OptiMOS 6.
Alternativas directas para BSC059N04LS6ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSC059N04LS6ATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Operating Junction Temperature, Product Family, RoHS Status.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSC059N04LS6
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSC0901NS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSZ0901NS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
NTTFS015N04CL
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SiR580DP
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSC059N04LS6ATMA1 Valores máximos y características eléctricas
| Technology | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TA=25C | 17 A |
| Continuous Drain Current (ID) at TC=25C | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | 59 A |
| On-Resistance RDS(on) max | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | 3 W |
| Total Power Dissipation at TC=25C | 38 W |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Rango de temperatura de funcionamiento | -55C to +150C |
| Encapsulado | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount |
| Diode Continuous Forward Current (IS) | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | 236 A at TC=25C |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de BSC059N04LS6ATMA1
| Pin 1 | Source — Source connection (pin 1 of SuperSO8) |
| Pin 2 | Source — Source connection (parallel with pin 1) |
| Pin 3 | Source — Source connection (parallel with pin 1) |
| Pin 4 | Gate — Gate control input |
| Pin 5 | Drain (Exposed Pad) — Drain connection - PCB thermal pad |
| Pin 6 | Source — Source connection (parallel with pin 1) |
| Pin 7 | Source — Source connection (parallel with pin 1) |
| Pin 8 | Source — Source connection (parallel with pin 1) |
Área de funcionamiento seguro - BSC059N04LS6ATMA1
Aplicaciones típicas
BSC059N04LS6ATMA1 es adecuado para 6 aplicacións: 12V Synchronous Rectification in Server SMPS, 24V Industrial DC-DC Point-of-Load Converters, Battery Management System (BMS) Load Switching, Hot-Swap and OR-ing Controllers, Low-Voltage Motor Drive Half-Bridges, Automotive 12V Load Switching and ECU Power.
12V Synchronous Rectification in Server SMPS
The BSC059N04LS6ATMA1 is optimized for the synchronous rectification stage in 12 V server SMPS where conduction loss dominates at high secondary-side currents. Its 5.9 mOhm RDS(on) and 49 A continuous drain current at TC=25C minimize forward voltage drop across the synchronous FET, improving overall converter efficiency by 1-2% versus higher-RDS(on) alternatives. The OptiMOS 6 platform reduces Qg and Qgd by approximately 20% versus prior generations, lowering switching loss in 300-500 kZ half-bridge designs. Pair with an Infineon EiceDRIVER gate driver (e.g. 1ED44175N02B) to fully exploit the switching speed.
Recomendado
24V Industrial DC-DC Point-of-Load Converters
The 40 V VDS rating of BSC059N04LS6ATMA1 provides adequate headroom above 24 V nominal bus voltage while the 5.9 mOhm RDS(on) minimizes conduction loss in POL converters stepping 24 V down to 5 V, 3.3 V, or 1.8 V rails. The 49 A continuous drain current at TC=25C supports single-FET POL designs up to 25 A output. For higher-power rails above 30 A output, parallel two BSC059N04LS6ATMA1 devices; OptiMOS 6 thermal performance helps balance current sharing. The PG-TDSON-8-6 footprint is widely adopted in 24 V industrial power modules.
Recomendado
Battery Management System (BMS) Load Switching
In 12 V and 24 V battery management systems, the BSC059N04LS6ATMA1 functions as the low-side load disconnect switch or OR-ing FET. Its 5.9 mOhm RDS(on) keeps continuous load current loss under 10 mW at 1 A load, extending battery runtime. The 40 V VDS rating protects against inductive transients when switching motors or solenoids. Its avalanche-rated body diode handles reverse current during parallel battery connection. Use a dedicated gate driver with overcurrent protection (e.g. BQ79656 family) for automotive BMS isolation requirements.
Recomendado
Hot-Swap and OR-ing Controllers
The BSC059N04LS6ATMA1 is ideal for -48 V telecom OR-ing and 12 V server hot-swap applications where the FET must sustain high inrush currents during card insertion. Its 59 A pulsed drain current rating handles the capacitive charging transient of downstream bulk capacitors. The 40 V VDS class supports standard 12 V bus rails (and up to 36 V industrial). Use the MOSFET in linear mode during inrush with a controlled gate ramp for inrush current limiting, then switch fully on for minimal conduction loss.
Recomendado
Low-Voltage Motor Drive Half-Bridges
For 12 V and 24 V brushed DC motor half-bridges, the BSC059N04LS6ATMA1 handles continuous motor currents up to 17 A at TA=25C with proper PCB thermal design. The OptiMOS 6 low Qg enables PWM frequencies above 50 kHz for silent motor operation. Pair two BSC059N04LS6ATMA1 devices in a half-bridge with the DRV8714SQRHARQ1 gate driver to build a complete 12 V motor drive stage with up to 30 A peak current. The 5.9 mOhm RDS(on) keeps I2R losses under 5 W at 20 A continuous motor current.
Recomendado
Automotive 12V Load Switching and ECU Power
While BSC059N04LS6ATMA1 is not AEC-Q100 qualified, its electrical characteristics make it suitable for non-safety automotive loads such as infotainment power rails, interior lighting drivers, and ECU peripheral switches in 12 V body-control applications. The 5.9 mOhm RDS(on) and 49 A continuous drain current support high-current body loads. For safety-critical applications (airbag, ADAS), choose an AEC-Q100 qualified MOSFET instead. The PG-TDSON-8-6 footprint is widely adopted in automotive ECU designs.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSC059N04LS6ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSC059N04LS6 | BSC0901NS | BSZ0901NS | NTTFS015N04CL | SiR580DP |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | Power-SO8 5x6 (pin-compatible) | Power-SO8 PolarPAK 5x6 (pin-compatible) |
| VDS (Drain-Source Voltage) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | Trench N-MOSFET | TrenchFET Gen IV |
| Approximate Unit Price (qty 1) | $1.85 | $1.85 (same die) | $1.50 | $1.40 | $1.95 | $2.10 |
Diferenciadores clave
- OptiMOS 6 technology delivers best-in-class FOM (RDS(on) x Qg) (frente a BSC0901NS (OptiMOS 5))
- Lowest on-resistance in 40V SuperSO8 footprint (frente a SiR580DP (Vishay PolarPAK))
- High continuous drain current at TC=25C (frente a NTTFS015N04CL (onsemi))
Notas de diseño
Estimated: At continuous drain current of 17 A at TA=25C (PCB-mounted with 1 in2 copper pour), the BSC059N04LS6ATMA1 dissipates approximately P=I2RDS(on) = 17^2 x 0.0059 = 1.7 W. With RthJA of approximately 50 C/W on standard JEDEC PCB, junction temperature rise is ~85C above 25C ambient, reaching 110C. Provide at least 1 square inch of top-side copper plus thermal vias to inner copper planes for full-load operation below 100C junction temperature.
The PG-TDSON-8-6 SuperSO8 package uses the central exposed pad (pin 5) as the drain terminal AND primary thermal path. The PCB land pattern must include a matching thermal pad with at least 9 thermal vias (0.3 mm drill, 1.0 mm pitch) connecting top-side copper to internal ground/drain planes. Source pins 1-3 and 6-8 should be tied together with wide copper pours to minimize parasitic source inductance, which directly impacts switching loss.
Gate-source voltage must stay within +/-20 V absolute maximum. Exceeding this (e.g. from ringing in high-dV/dt circuits) will permanently damage the gate oxide. Use a gate-source resistor (10-100 kOhm) to hold the gate off during power-up, and consider a TVS or Zener clamp on the gate for high-transient environments. Always sequence the gate drive after the drain supply is stable.
Estimated: In a synchronous buck converter at 300 kHz switching frequency with 20 A output, the BSC059N04LS6ATMA1 incurs switching loss Psw = 0.5 x VDS x ID x (trise + tfall) x fsw. Assuming 10 ns switching transitions, switching loss is approximately 0.5 x 20 x 20 x 10e-9 x 300e3 = 0.6 W. Combined with 0.5 W conduction loss, total MOSFET dissipation is approximately 1.1 W. Use Infineon's OptiMOS 6 efficiency calculator for design-specific values.
Información de cumplimiento
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - choose an AEC-Q100 part for automotive safety applications. Halogen-free status not explicitly stated in available data.
