BSC027N06LS5ATMA1 vs BSZ070N08LS5ATMA1 Comparación
Comparación detallada lado a lado de BSC027N06LS5ATMA1 por Infineon y BSZ070N08LS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC027N06LS5ATMA1 | BSZ070N08LS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,66 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Tc=100°C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | [DATA_NEEDED: IDM pulsed] |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm | — |
| On-Resistance (RDS(on)) @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (PD) at Tc=25°C | 83 W | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C | — |
| Encapsulado / Carcasa | PG-TDSON-8-7 (SuperSO8 5x6) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Avalanche Energy Rated | Yes | — |
| Estado RoHS | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Part Family | — | OptiMOS™ 5 (80 V logic-level) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TC | — | 74 A (Tc, per datasheet) |
| Continuous Drain Current (ID) at TA / Si | — | [DATA_NEEDED: TA-rated ID] |
| On-Resistance RDS(on) max @ VGS=10 V | — | 7 mΩ |
| On-Resistance RDS(on) @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate Threshold Voltage VGS(th) | — | Logic-level (drive compatible with 4.5 V) |
| Total Gate Charge Qg | — | [DATA_NEEDED: total Qg] |
| Power Dissition PD max at TC | — | 69 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +150 °C |
| Encapsulado | — | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount |
| Nivel MSL | — | 1 (per JEDEC J-STD-020, unleaded reflow) |
| Avalanche Rated | — | Yes |
| Reel Quantity | — | 5000 per 13-inch reel (T&R) |