BSC027N06LS5ATMA1 vs BSZ070N08LS5ATMA1 Comparison

Detailed side-by-side comparison of BSC027N06LS5ATMA1 by Infineon and BSZ070N08LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 βœ“ Active
Infineon
BSZ070N08LS5ATMA1

BSZ070N08LS5ATMA1 - 80V 7mΞ© OptiMOS 5 N-FET | Infineon

BSZ070N08LS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC027N06LS5ATMA1 BSZ070N08LS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOSβ„’ 5 β€”
Part Status Active β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) β€”
Drain-Source Voltage (VDS) 60 V β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) Logic-level β€”
Continuous Drain Current (ID) at Tc=25Β°C 100 A β€”
Continuous Drain Current (ID) at Tc=100Β°C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: IDM pulsed]
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm β€”
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] β€”
Power Dissipation (PD) at Tc=25Β°C 83 W β€”
Operating Temperature Range -55Β°C to +150Β°C β€”
Package / Case PG-TDSON-8-7 (SuperSO8 5x6) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Gate Charge (Qg) [DATA_NEEDED: total Qg] β€”
Avalanche Energy Rated Yes β€”
RoHS Status Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 β€”
Part Family β€” OptiMOSβ„’ 5 (80 V logic-level)
Polarity / Channel Type β€” N-Channel enhancement mode
Drain-Source Voltage (VDS) max β€” 80 V
Gate-Source Voltage (VGS) max β€” Β±20 V
Continuous Drain Current (ID) at TC β€” 74 A (Tc, per datasheet)
Continuous Drain Current (ID) at TA / Si β€” [DATA_NEEDED: TA-rated ID]
On-Resistance RDS(on) max @ VGS=10 V β€” 7 mΞ©
On-Resistance RDS(on) @ VGS=4.5 V β€” [DATA_NEEDED: RDS(on) at 4.5 V]
Gate Threshold Voltage VGS(th) β€” Logic-level (drive compatible with 4.5 V)
Total Gate Charge Qg β€” [DATA_NEEDED: total Qg]
Power Dissition PD max at TC β€” 69 W
Operating Junction Temperature β€” -55 Β°C to +150 Β°C
Package β€” PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount
MSL Level β€” 1 (per JEDEC J-STD-020, unleaded reflow)
Avalanche Rated β€” Yes
Reel Quantity β€” 5000 per 13-inch reel (T&R)

Datasheets & Resources

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