BSC028N06NSTATMA1 vs IPB020N08N5ATMA1 Comparación
Comparación detallada lado a lado de BSC028N06NSTATMA1 por Infineon y IPB020N08N5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC028N06NSTATMA1 | IPB020N08N5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,40 | $1,45 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Part Number Base | BSC028N06NS | — |
| Technology | MOSFET N-Channel (OptiMOS 5) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | — |
| Total Gate Charge Qg | 37 nC @ VGS=10V | — |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | — |
| Output Capacitance Coss | 825 pF | — |
| Reverse Transfer Capacitance Crss | 56 pF | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 100 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55C to +175C |
| Encapsulado | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-TO263-3 (D2PAK-2) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| Nivel MSL | 1 | [DATA_NEEDED: MSL level] |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | — |
| Continuous Drain Current (ID) at Tc=25C | — | 120 A |
| Pulsed Drain Current (IDM) | — | 480 A |
| Maximum RDS(on) at VGS=10V | — | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at Tc=25C | — | 300 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value, approx 0.5 C/W] |
| Avalanche Energy Rated (EAS) | — | [DATA_NEEDED: EAS value] |
| Configuration | — | Single N-channel, 3-pin (2+Tab) |