BSC028N06NSTATMA1 vs IPB020N08N5ATMA1 Comparaison
Comparaison détaillée côte à côte de BSC028N06NSTATMA1 par Infineon et IPB020N08N5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC028N06NSTATMA1 | IPB020N08N5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,40 | $1,45 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Part Number Base | BSC028N06NS | — |
| Technology | MOSFET N-Channel (OptiMOS 5) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | — |
| Total Gate Charge Qg | 37 nC @ VGS=10V | — |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | — |
| Output Capacitance Coss | 825 pF | — |
| Reverse Transfer Capacitance Crss | 56 pF | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 100 W | — |
| Température de jonction en fonctionnement | -55C to +175C | -55C to +175C |
| Boîtier | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-TO263-3 (D2PAK-2) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Sans halogène | Yes | — |
| Niveau MSL | 1 | [DATA_NEEDED: MSL level] |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | — |
| Continuous Drain Current (ID) at Tc=25C | — | 120 A |
| Pulsed Drain Current (IDM) | — | 480 A |
| Maximum RDS(on) at VGS=10V | — | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at Tc=25C | — | 300 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value, approx 0.5 C/W] |
| Avalanche Energy Rated (EAS) | — | [DATA_NEEDED: EAS value] |
| Configuration | — | Single N-channel, 3-pin (2+Tab) |