BSC032N04LSATMA1 vs BSC150N03LDGATMA1 Comparación
Comparación detallada lado a lado de BSC032N04LSATMA1 por Infineon y BSC150N03LDGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
BSC150N03LDGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC032N04LSATMA1 | BSC150N03LDGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,32 | $0,46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 40V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 98 A | — |
| RDS(on) max at VGS=10V | 3.2 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 52 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Technology | OptiMOS 5 trench | — |
| Encapsulado | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de unión de funcionamiento | -55°C to +175°C | -55C to +150C |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel MOSFET Array (half-bridge) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ TA=25C | — | 20 A |
| Continuous Drain Current (Id) @ TA=70C | — | [DATA_NEEDED: Id at TA=70C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm] |
| Gate-Source Voltage (Vgs) | — | ±20 V |
| Gate Threshold Voltage (Vgs(th)) | — | 1.0 V to 2.5 V |
| On-State Resistance (Rds(on)) @ Vgs=10V | — | [DATA_NEEDED: typical Rds(on) mOhm] |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: typical Rds(on) mOhm] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg nC] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: typical Qgd nC] |
| Output Charge (Qoss) | — | [DATA_NEEDED: typical Qoss nC] |
| Power Dissipation (Pd) | — | 26 W |
| Nivel MSL | — | 1 |
| Sin halógenos | — | Yes |