BSC032N04LSATMA1 vs BSC150N03LDGATMA1 비교
다음의 상세 나란히 비교: BSC032N04LSATMA1 제조: Infineon 및 BSC150N03LDGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC032N04LSATMA1 | BSC150N03LDGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.32 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 40V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 98 A | — |
| RDS(on) max at VGS=10V | 3.2 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 52 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Technology | OptiMOS 5 trench | — |
| 패키지 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 접합 온도 | -55°C to +175°C | -55C to +150C |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel MOSFET Array (half-bridge) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ TA=25C | — | 20 A |
| Continuous Drain Current (Id) @ TA=70C | — | [DATA_NEEDED: Id at TA=70C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm] |
| Gate-Source Voltage (Vgs) | — | ±20 V |
| Gate Threshold Voltage (Vgs(th)) | — | 1.0 V to 2.5 V |
| On-State Resistance (Rds(on)) @ Vgs=10V | — | [DATA_NEEDED: typical Rds(on) mOhm] |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: typical Rds(on) mOhm] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg nC] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: typical Qgd nC] |
| Output Charge (Qoss) | — | [DATA_NEEDED: typical Qoss nC] |
| Power Dissipation (Pd) | — | 26 W |
| MSL 레벨 | — | 1 |
| 할로겐 프리 | — | Yes |