BSC039N06NSATMA1 vs IPB17N25S3100ATMA1 Comparación
Comparación detallada lado a lado de BSC039N06NSATMA1 por Infineon y IPB17N25S3100ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC039N06NSATMA1 | IPB17N25S3100ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,46 | $1,84 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 250 V |
| Continuous Drain Current (ID) at TA | 19 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value at TC] | 64 A |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Power Dissipation at TA (PD) | 2.5 W | — |
| Power Dissipation at TC (PD) | 69 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | — |
| Encapsulado | PG-TDSON-8-6 (TDSON EP, 5x6 mm) | PG-TO263-3-2 (D2PAK-2) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Número de pines | 8 | — |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| Technology | OptiMOS 5 (TrenchFET-style) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | Compliant (Green Product) |
| Part Number | — | IPB17N25S3100ATMA1 |
| Continuous Drain Current (ID) at Tc | — | 17 A |
| Drain-Source On-Resistance (RDS(on)) | — | 100 mOhm max @ VGS = 10 V |
| Typical RDS(on) | — | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Total Gate Charge (Qg) | — | 19 nC @ VGS = 10 V |
| Input Capacitance (Ciss) | — | 1.5 nF |
| Output Capacitance (Coss) | — | 23 pF |
| Reverse Transfer Capacitance (Crss) | — | 625 pF |
| Power Dissipation (PD) | — | 107 W at Tc = 25 C |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C |
| MSL (Moisture Sensitivity Level) | — | MSL1 (up to 260 C peak reflow) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Rated | — | 100% avalanche tested |