BSC0502NSIATMA1 vs BSC0501NSIATMA1 Comparación
Comparación detallada lado a lado de BSC0502NSIATMA1 por Infineon y BSC0501NSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC0502NSIATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,85 | $0,65 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench MOSFET) | Trench-gate OptiMOS 5 |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Continuous Drain Current (ID) at TA | 26 A | — |
| RDS(on) Max at VGS=10V | 2.3 mOhm | — |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC | — |
| Output Charge QOSS Typ | 13.5 nC | — |
| Power Dissipation at TA (Ta=25C) | 2.5 W | — |
| Power Dissipation at TC (Tc=25C) | 43 W | — |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Rango de temperatura de funcionamiento | -55C to +150C | — |
| Encapsulado | PG-TDSON-8 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon |
| Product Family | — | OptiMOS 5 25V/30V |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 50 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Temperatura de unión de funcionamiento | — | -55C to +150C |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes |