BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
N.º de pieza: BSC0502NSIATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.71 | $1,71 |
| 10 | $1.55 | $15,50 |
| 100 | $1.32 | $132,00 |
| 500 | $1.12 | $560,00 |
| 1.000 | $0.98 | $980,00 |
| 3.000 | $0.85 | $2.550,00 |
BSC0502NSIATMA1 Descripción general
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion, motor drive, and load management. As an N-channel enhancement-mode device, BSC0502NSIATMA1 turns on when VGS exceeds its gate threshold. The OptiMOS 5 family from Infineon represents the fifth-generation trench MOSFET platform, positioned within the broader hierarchy of discrete semiconductors and power MOSFETs.
Key specifications include 2.3 mOhm maximum RDS(on) at VGS = 10 V, a 9.0 nC typical gate charge (0V to 4.5V), and 13.5 nC output charge QOSS. These figures translate directly to low conduction loss at high current, low switching loss in high-frequency converters, and excellent soft-start behavior. The device handles 100 A continuous drain current at TC and 26 A at TA, making it well suited for both thermal-limited and ambient-cooled layouts.
The PG-TDSON-8 SuperSO8 package exposes a large source pad that doubles as a thermal pad, giving the part very low thermal resistance from junction to PCB. This allows designers to sink tens of watts of dissipation through copper pours without an external heatsink, simplifying PCB layout.
Typical applications include synchronous rectification in 12 V buck converters for server, telecom, and GPU VR rails, hot-swap and OR-ing circuits in redundant power supplies, battery management and protection in e-mobility and power tools, and motor drive in low-voltage brushless DC fans and pumps. The 30 V rating also makes it appropriate for USB-PD sink/source paths and 24 V industrial bus switches.
When designing with this part, place gate-drive decoupling within 5 mm of the gate pin and use a 10 kohm gate-source resistor to prevent parasitic turn-on during high dV/dt switching events. Keep the source-sense path tight to avoid Rds_on inflation from package inductance.
This page consolidates distributor pricing, drop-in alternatives in the same PG-TDSON-8 footprint, and practical layout guidance drawn from manufacturer datasheets and reference designs.
Alternativas directas para BSC0502NSIATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSC0502NSIATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Operating Temperature Range, Configuration, MSL Level.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSC0501NSIATMA1
✅ Sustitución directa✓ En stock
$0.65 / unidad
Ver hoja de datos →BSC018N04LSGATMA1
✅ Sustitución directa✓ En stock
$0.52 / unidad
Ver hoja de datos →BSC034N06NSATMA1
✅ Sustitución directa✓ En stock
$0.65 / unidad
Ver hoja de datos →BSC070N10NS5ATMA1
✅ Sustitución directa✓ En stock
$0.68 / unidad
Ver hoja de datos →BSC014N04LSATMA1
✅ Sustitución directa✓ En stock
$0.74 / unidad
Ver hoja de datos →BSC0993NDATMA1
✅ Sustitución directa✓ En stock
$1.32 / unidad
Ver hoja de datos →BSC0502NSIATMA1 Valores máximos y características eléctricas
| FET Type | N-Channel |
| Technology | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) at TC | 100 A |
| Continuous Drain Current (ID) at TA | 26 A |
| RDS(on) Max at VGS=10V | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC |
| Output Charge QOSS Typ | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | 2.5 W |
| Power Dissipation at TC (Tc=25C) | 43 W |
| Rango de temperatura de funcionamiento | -55C to +150C |
| Encapsulado | PG-TDSON-8 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
Configuración de pines de BSC0502NSIATMA1
| Pin 1 | Source — Source connection (also tied to exposed pad) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
| Pin PAD | Source / Thermal Pad — Exposed pad - source electrical and thermal connection (must be soldered to PCB copper pour) |
Área de funcionamiento seguro - DC
Aplicaciones típicas
BSC0502NSIATMA1 es adecuado para 6 aplicacións: 12V Synchronous Rectifier for Server / GPU VR, Hot-Swap / OR-ing in Redundant 12V / 24V Supplies, Battery Management & Protection in Power Tools / E-Bikes, Brushless DC Motor Drive (Low-Voltage Fans / Pumps), USB-PD Sink / Source Power Path Switch, Load Switch & Power Mux in Industrial 24V Bus Systems.
12V Synchronous Rectifier for Server / GPU VR
The BSC0502NSIATMA1 sits on the low-side of a 12 V to 1 V buck stage, replacing a Schottky rectifier to cut conduction loss. Its 2.3 mOhm Rds_on at 100 A delivers roughly 23 W of conduction loss versus the 60-80 W of a comparable Schottky, freeing up thermal budget and improving total converter efficiency by 2-4%. The 30 V VDS rating provides comfortable headroom above the 12 V bus plus switching spikes, while the 9.0 nC gate charge keeps driver losses small at 300-500 kHz switching frequencies typical of multiphase VR designs.
Recomendado
Hot-Swap / OR-ing in Redundant 12V / 24V Supplies
The BSC0502NSIATMA1 is well suited to 12 V and 24 V hot-swap and OR-ing paths where it carries continuous load current during normal operation and blocks reverse current during fault events. Its 100 A continuous rating at TC handles full server PSU load, while the 30 V VDS absorbs inrush transients on the bus. Designers gate the device with a controlled dV/dt during hot-plug to limit inrush, leveraging the part's 13.5 nC QOSS to keep body-diode losses manageable during commutation.
Recomendado
Battery Management & Protection in Power Tools / E-Bikes
The BSC0502NSIATMA1 functions as the low-side protection FET in 10-24 V lithium battery packs, switching at low duty cycle for cut-off and short-circuit protection. Its 2.3 mOhm Rds_on contributes minimal loss during normal discharge, and the 100 A capability covers peak motor currents in cordless drills, leaf blowers, and e-bike controllers. The PG-TDSON-8 footprint enables very compact BMS layouts, while the wide operating temperature range supports harsh underhood environments.
Recomendado
Brushless DC Motor Drive (Low-Voltage Fans / Pumps)
In 12 V and 24 V brushless DC fans and pumps, the BSC0502NSIATMA1 serves as the low-side phase FET in a 3-phase inverter, switching at 20-50 kHz PWM. The 2.3 mOhm Rds_on keeps I^2R conduction loss low during high-current torque events, while the small SuperSO8 footprint fits inside the motor housing. Combined with companion high-side FETs from the OptiMOS family, this part delivers an integrated inverter solution for compact BLDC designs.
Recomendado
USB-PD Sink / Source Power Path Switch
The BSC0502NSIATMA1 enables the 20 V / 5 A power path in USB Power Delivery sink and source designs, replacing older P-channel MOSFETs to reduce conduction loss. Its 30 V VDS handles the 20 V PD bus plus transient ringing at the connector, while the 2.3 mOhm Rds_on keeps voltage drop below 100 mV at 5 A. Gate control is straightforward from a PD controller GPIO, and the SuperSO8 package fits within Type-C connector PCBs.
Recomendado
Load Switch & Power Mux in Industrial 24V Bus Systems
The BSC0502NSIATMA1 acts as a low-side or high-side load switch on 24 V industrial buses, where its 30 V VDS provides safe margin above the nominal bus and absorbs switching transients from inductive loads. The 100 A continuous rating handles the inrush of large solenoid or motor loads, while the 2.3 mOhm Rds_on keeps steady-state dissipation low. Factory automation PLCs and distributed I/O modules use this topology for per-channel load management.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSC0502NSIATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSC0501NSIATMA1 | BSC018N04LSGATMA1 | BSC034N06NSATMA1 | BSC070N10NS5ATMA1 | BSC014N04LSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 (SuperSO8 5x6) | PG-TDSON-8 (SuperSO8 5x6) - same | PG-TDSON-8 (SuperSO8 5x6) - same | PG-TDSON-8 (SuperSO8 5x6) - same | PG-TDSON-8 (SuperSO8 5x6) - same | PG-TDSON-8 (SuperSO8 5x6) - same |
| VDS Max | 30 V | 30 V | 40 V | 60 V | 100 V | 40 V |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
Diferenciadores clave
- Drop-in upgrade path to tighter Rds_on within the same footprint (frente a BSC0501NSIATMA1)
- Higher VDS headroom in same PG-TDSON-8 footprint (frente a BSC034N06NSATMA1)
- OptiMOS 5 process for lowest gate charge in class (frente a BSC070N10NS5ATMA1)
Notas de diseño
Estimated: At continuous 50 A load with Rds_on of 2.3 mOhm, conduction loss is approximately 5.75 W (I^2 x R). The PG-TDSON-8 source pad must be soldered to at least 1 square inch of 2 oz copper pour on the top and bottom PCB layers with thermal vias to keep junction temperature rise manageable. Without adequate copper, the 26 A TA rating - not the 100 A TC rating - becomes the design limit.
Keep the high-di/dt power loop (drain to bottom FET source to ground return) as short and wide as possible - typically less than 10 mm total loop length in synchronous-rectifier layouts. Place the gate-drive decoupling capacitor within 5 mm of the gate pin to suppress parasitic oscillations. Use a 10 kohm gate-source pull-down resistor to prevent unintended turn-on during high dV/dt transitions.
Do not exceed the 30 V VDS rating even during transient spikes - inductive loads require external snubbers or TVS clamps. The body diode of this MOSFET is not optimized for sustained reverse conduction; if dead-time is excessive, supplement with an external Schottky in parallel. Always verify that the gate driver can source/sink sufficient peak current (typically 1-2 A) to charge the 9.0 nC gate charge within the target switching period.
Información de cumplimiento
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial and computing applications, not automotive.
