BSC077N12NS3GATMA1 vs BSC117N08NS5ATMA1 Comparación
Comparación detallada lado a lado de BSC077N12NS3GATMA1 por Infineon y BSC117N08NS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC077N12NS3GATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,71 | $0,46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | — |
| Tipo de transistor | N-Channel MOSFET (enhancement-mode trench) | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta | 13.4 A | — |
| Continuous Drain Current (ID) at Tc | 98 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Tc | 139 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | — |
| Encapsulado | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | 8 |
| Nivel MSL | 1 | 1 |
| Estado RoHS | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | — |
| Part Number | — | BSC117N08NS5ATMA1 |
| Technology | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C (typical MOSFET junction) |
| Lead-Free | — | Yes |