BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
N.º de pieza: BSC077N12NS3GATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.44 | $1,44 |
| 10 | $1.3 | $13,00 |
| 100 | $1.15 | $115,00 |
| 500 | $0.96 | $480,00 |
| 1.000 | $0.84 | $840,00 |
| 5.000 | $0.71 | $3.550,00 |
BSC077N12NS3GATMA1 Descripción general
An OptiMOS power MOSFET is a trench-technology N-channel enhancement-mode device designed to minimize conduction and switching losses in power conversion stages, sitting in the hierarchy: trench MOSFET -> power MOSFET -> discrete semiconductor -> power management. The OptiMOS 3 120 V family balances ultra-low RDS(on) with low gate charge and excellent body-diode ruggedness, enabling high-frequency, high-efficiency designs.
Key features include an industry-leading 7.7 mΩ maximum RDS(on) at VGS = 10 V, an excellent figure of merit (FOM = RDS(on) × Qg), and a 120 V drain-source breakdown voltage that provides substantial headroom over nominal 48 V or 72 V bus rails. The SuperSO8 5x6 package (PG-TDSON-8-1) provides a thermal resistance around 1.0 C/W (RthJC), supporting high-current operation with proper PCB thermal design.
Technically, the device uses Infineon's third-generation OptiMOS trench process, which optimizes cell pitch and epitaxial structure to reduce both on-resistance and switching losses simultaneously. This makes it well suited for synchronous rectification, DC-DC conversion, motor drive, and hot-swap stages where high efficiency and small PCB footprint are mandatory.
Typical applications include synchronous rectification in telecom and server SMPS, 48 V eMobility and mild-hybrid auxiliary converters, DC-DC buck/boost converters for industrial and computing systems, motor control and Class-D audio amplifiers, and hot-swap / OR-ing circuits on 48 V rails. The wide 120 V rating also makes it suitable for solar and battery management.
A key design consideration is gate-drive voltage: the device is fully enhanced at VGS = 10 V, with a typical gate threshold of 2.5 V, so a 10 V driver is required to reach the published on-resistance. A small external gate resistor (4.7-10 Ω) controls ringing and EMI. The exposed pad must be soldered to a large copper pour for thermal performance.
This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design notes not found in the manufacturer datasheet alone, giving engineers a complete decision matrix for selecting or replacing the BSC077N12NS3GATMA1.
Alternativas directas para BSC077N12NS3GATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSC077N12NS3GATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSC077N12NS3G
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
BSC0906NSATMA1
✅ Sustitución directa✓ En stock
$0.48 / unidad
Ver hoja de datos →BSC052N08NS5ATMA1
✅ Sustitución directa✓ En stock
$0.52 / unidad
Ver hoja de datos →BSC060N10NS3GATMA1
✅ Sustitución directa✓ En stock
$0.78 / unidad
Ver hoja de datos →BSC117N08NS5ATMA1
✅ Sustitución directa✓ En stock
$0.46 / unidad
Ver hoja de datos →BSC077N12NS3GATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) |
| Tipo de transistor | N-Channel MOSFET (enhancement-mode trench) |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) at Ta | 13.4 A |
| Continuous Drain Current (ID) at Tc | 98 A |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | 2.5 V |
| Power Dissipation (PD) at Tc | 139 W |
| Temperatura de unión de funcionamiento | -55C to +150C |
| Encapsulado | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount |
| Recuento de pines | 8 |
| Nivel MSL | 1 |
| Estado RoHS | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) |
Configuración de pines de BSC077N12NS3GATMA1
| Pin 1 | Source — Source connection (low-side reference) |
| Pin 2 | Source — Source connection (low-side reference) |
| Pin 3 | Source — Source connection (low-side reference) |
| Pin 4 | Gate — Gate drive input (10 V enhancement) |
| Pin 5 | Drain — Drain connection (high-voltage) |
| Pin 6 | Drain — Drain connection (high-voltage) |
| Pin 7 | Drain — Drain connection (high-voltage) |
| Pin 8 | Drain — Drain connection (high-voltage) |
| Pin EP | Drain (Exposed Pad) — Thermal pad and electrical drain; solder to PCB copper |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
BSC077N12NS3GATMA1 es adecuado para 6 aplicacións: Synchronous Rectification in Telecom SMPS, 48V eMobility and Mild-Hybrid DC-DC Converters, Industrial Motor Drive and H-Bridge, Hot-Swap and OR-ing on 48 V Rails, Class-D Audio Amplifier Output Stage, Solar Microinverter and Battery Management.
Synchronous Rectification in Telecom SMPS
The BSC077N12NS3GATMA1 is ideally suited for the synchronous-rectifier (SR) position in 48 V-input telecom and server switched-mode power supplies, where its 7.7 mΩ max RDS(on) at VGS = 10 V and 120 V VDS rating minimize conduction loss while leaving headroom for transient spikes on the 48 V bus. In a typical 48 V to 12 V buck converter, the low-side MOSFET sees continuous current at the full load, so the 7.7 mΩ on-resistance reduces rectifier losses by 30-40% versus older 120 V generations, directly improving overall efficiency by 0.5-1%. The device's low gate charge further reduces switching loss at the 200-500 kHz operating frequencies typical of modern telecom bricks.
Recomendado
48V eMobility and Mild-Hybrid DC-DC Converters
Automotive 48 V mild-hybrid systems require MOSFETs with 100 V+ voltage ratings to handle inductive transients and load-dump events. The BSC077N12NS3GATMA1's 120 V VDS rating, automotive qualification, and 7.7 mΩ RDS(on) make it a strong candidate for 48 V-to-12 V buck/boost DC-DC converters used in auxiliary battery management and accessory drives. The PG-TDSON-8-1 (SuperSO8 5x6) footprint fits within the small PCB areas typical of integrated 48 V modules. Engineers should note the device's -55C to +150C operating range supports under-hood and chassis-mounted power electronics.
Recomendado
Industrial Motor Drive and H-Bridge
The BSC077N12NS3GATMA1 works well as a high-side or low-side switch in 24-72 V industrial motor drive H-bridges, where the 120 V rating handles inductive kick-back and the 7.7 mΩ RDS(on) minimizes thermal dissipation at high PWM switching frequencies up to 50 kHz. In a typical 3-phase brushless DC (BLDC) drive, four such MOSFETs per phase leg provide high peak-current capability while keeping junction temperatures below 125C with proper PCB copper. Designers should pair this MOSFET with a gate driver rated for 10 V VGS such as the IR2110 or EiceGate driver family.
Recomendado
Hot-Swap and OR-ing on 48 V Rails
Hot-swap controllers require MOSFETs that can withstand inrush currents and continuous load while presenting minimal voltage drop. The BSC077N12NS3GATMA1 with 7.7 mΩ RDS(on) and 98 A Tc rating is well-suited to 48 V hot-swap and OR-ing applications where its 120 V rating provides safe transient margin and the device's trench process ensures robust linear-mode operation during turn-on. In OR-ing configurations, the low on-resistance reduces steady-state power loss: at 30 A continuous, dissipation is approximately 6.9 W, manageable with 1 square-inch of 1 oz copper. The exposed pad enables direct board-level cooling without an external heatsink.
Recomendado
Class-D Audio Amplifier Output Stage
The BSC077N12NS3GATMA1's combination of low RDS(on), 120 V rating, and fast switching makes it an excellent output-stage MOSFET for high-power Class-D audio amplifiers operating from ±50 V or 100 V single-supply rails. The low on-resistance minimizes crossover-distortion losses at high audio output levels, and the device's fast body-diode recovery supports the high PWM carrier frequencies (250-500 kHz) common in modern Class-D designs. For a 500 W per channel amplifier, two such MOSFETs per half-bridge provide ample thermal margin in the PG-TDSON-8-1 package.
Recomendado
Solar Microinverter and Battery Management
In solar microinverters and battery management systems, the BSC077N12NS3GATMA1 handles the high-voltage side of DC-DC and DC-AC conversion stages where 80-100 V DC bus rails are common. Its 120 V rating provides safe margin for transient over-voltages from MPPT perturbation or load transients, while the 7.7 mΩ RDS(on) maximizes conversion efficiency critical to overall energy yield. The SuperSO8 5x6 package allows compact inverter designs with all components fitting on a small aluminum substrate. AEC-Q automotive variants also enable use in EV charging stations.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSC077N12NS3GATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSC077N12NS3G | BSC0906NSATMA1 | BSC052N08NS5ATMA1 | BSC060N10NS3GATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| VDS Rating | 120 V | 120 V | 120 V | 80 V (-33%) | 100 V (-17%) | 80 V (-33%) |
| RDS(on) max @ VGS=10V | 7.7 mΩ | 7.7 mΩ (identical die) | 9.0 mΩ (+17%) | 5.2 mΩ (-32%) | 6.0 mΩ (-22%) | 11.7 mΩ (+52%) |
| Continuous Drain Current (Tc) | 98 A | 98 A (identical die) | 82 A | 85 A | 90 A | 70 A |
| Power Dissipation (Tc) | 139 W | 139 W (identical die) | 115 W | 96 W | 125 W | 78 W |
| Technology Family | OptiMOS 3 (120 V) | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 (newer generation) | OptiMOS 3 | OptiMOS 5 |
| Packaging Form | Tape & Reel (GATMA1) | Tube/Tray | Tape & Reel | Tape & Reel | Tape & Reel | Tape & Reel |
Diferenciadores clave
- Industry-leading 7.7 mΩ RDS(on) at 120 V in SuperSO8 5x6 (frente a BSC0906NSATMA1)
- 120 V rating gives 20% voltage headroom over 100 V competitors (frente a BSC060N10NS3GATMA1)
- OptiMOS 3 process proven across automotive and industrial (frente a BSC052N08NS5ATMA1 (OptiMOS 5))
Notas de diseño
The PG-TDSON-8-1 package achieves its rated 98 A at Tc only with substantial PCB copper. With the exposed pad soldered to 1 oz copper of 1 square inch, RthJA is approximately 50 C/W; with 4 square inches it drops to ~25 C/W. For continuous 50 A operation at 25C ambient, plan for at least 2 square inches of 2 oz copper. Estimated: at 50 A with 100% duty, conduction loss = 50^2 × 0.0077 = 19.25 W; without enhanced copper, junction temperature would exceed 175C in seconds. Always use multiple thermal vias under the exposed pad.
The PG-TDSON-8-1 footprint requires careful PCB layout: the drain pins (5-8) and exposed pad must be soldered to a single contiguous copper pour, while the source pins (1-3) sit on a separate source copper. Use an array of 0.3 mm thermal vias (8-12 vias minimum) under the exposed pad to maximize heat transfer. The gate trace (pin 4) should be kept short and routed away from the drain copper to minimize parasitic gate-drain capacitance coupling and ringing.
Do not operate the gate below the rated VGS threshold reliably; partial enhancement at VGS = 4.5 V can cause the device to operate in the linear region with high dissipation and rapid thermal runaway. Always drive the gate with a 10 V rail. A small series gate resistor of 4.7-10 Ω damps ringing from the gate-source inductance. Do not exceed the avalanche energy rating during turn-off of inductive loads; for repetitive avalanche, add a TVS diode or snubber.
Source pins (1-3) carry the full load current and must be Kelvin-connected to the gate driver's ground reference to avoid source-inductance-induced gate-drive errors. Place a 100 nF ceramic bypass capacitor (X7R) between gate and source as close as possible to pin 4 to suppress noise. Keep high-dv/dt drain traces away from the gate trace by at least 2 mm to prevent capacitive coupling that could falsely enhance the MOSFET during fast switching transitions.
Información de cumplimiento
RoHS and REACH compliant per Infineon product page. AEC-Q101 automotive qualified. Lead-free (Pb-free) reflow-compatible. Halogen-free per Infineon OptiMOS family documentation.
