BSC0901NSIATMA1 vs BSC0901NSATMA1 Comparación
Comparación detallada lado a lado de BSC0901NSIATMA1 por Infineon y BSC0901NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC0901NSIATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,38 | $0,78 |
| Technology | OptiMOS 25V N-Channel Power MOSFET | N-Channel Trench MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10V | 2.0 mOhm typical | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2.2 V max | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge nC] | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 69 W | 69 W |
| Rango de temperatura de funcionamiento | -55 C to +150 C | -55C to +150C |
| Encapsulado | PG-TDSON-8-6 (5x6 mm with exposed pad) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Nivel MSL | 1 | — |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Nivel de sensibilidad a la humedad (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |