BSC0901NSIATMA1 vs BSC0901NSATMA1 Comparaison
Comparaison détaillée côte à côte de BSC0901NSIATMA1 par Infineon et BSC0901NSATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC0901NSIATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,38 | $0,78 |
| Technology | OptiMOS 25V N-Channel Power MOSFET | N-Channel Trench MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10V | 2.0 mOhm typical | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2.2 V max | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge nC] | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 69 W | 69 W |
| Plage de température de fonctionnement | -55 C to +150 C | -55C to +150C |
| Boîtier | PG-TDSON-8-6 (5x6 mm with exposed pad) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 8 | — |
| Niveau MSL | 1 | — |
| Statut RoHS | Compliant | Compliant |
| Sans halogène | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Niveau de sensibilité à l'humidité (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |