BSC0902NSATMA1 vs BSC040N08NS5ATMA1 Comparación
Comparación detallada lado a lado de BSC0902NSATMA1 por Infineon y BSC040N08NS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC0902NSATMA1 | BSC040N08NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $1,15 |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID, Ta) | 24 A | — |
| Pulsed Drain Current (IDM, Tc) | 100 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 48 W | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) @ VGS=10V max | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| RDS(on) @ VGS=4.5V max | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical] | — |
| Rango de temperatura de funcionamiento | -55C to +150C (Tj) | — |
| Encapsulado | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Qualification | JEDEC qualified for target applications | — |
| RoHS Compliance | Compliant (Pb-free lead plating) | — |
| Sin halógenos | Yes, per IEC 61249-2-21 | — |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC040N08NS5ATMA1 |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | — | 121 A |
| On-Resistance (RDS(on) max, VGS=10V) | — | 4 mOhm |
| Power Dissipation (Ta=25C, 1in² PCB) | — | 2.5 W |
| Power Dissipation (Tc=25C) | — | 104 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Estado RoHS | — | Compliant |
| Nivel MSL | — | 1 |
| Primary Application | — | Synchronous rectification in telecom and server power supplies |