BSC0902NSIATMA1 vs BSC084P03NS3GATMA1 Comparación
Comparación detallada lado a lado de BSC0902NSIATMA1 por Infineon y BSC084P03NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
BSC084P03NS3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC0902NSIATMA1 | BSC084P03NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,32 | $0,24 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 30V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TA=25C | 23 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | — |
| Gate Charge QG(0V..10V) | 24 nC | — |
| Output Charge QOSS | 17 nC | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 48 W | — |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | -55C to +150C |
| Encapsulado | PG-TDSON-8-6 (TDSON-8) | PG-TDSON-8-5 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Sin halógenos | Yes | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (Ta) | — | 14.9 A |
| Continuous Drain Current (Tc) | — | 78.6 A |
| Rds(on) max @ VGS = -10 V | — | 6.1 mOhm |
| Rds(on) max @ VGS = -2.5 V | — | [DATA_NEEDED: Rds(on) at 2.5V] |
| Gate Threshold Voltage (VGS(th) typ) | — | -1.7 V |
| Total Gate Charge (Qg) | — | 58 nC @ VGS = -10 V |
| Input Capacitance (Ciss) | — | 3.19 nF |
| Output Capacitance (Coss) | — | 110 pF |
| Reverse Transfer Capacitance (Crss) | — | 1.52 nF |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| Technology Family | — | OptiMOS P3 |