BSC0902NSIATMA1 vs BSC084P03NS3GATMA1 비교
다음의 상세 나란히 비교: BSC0902NSIATMA1 제조: Infineon 및 BSC084P03NS3GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC0902NSIATMA1 | BSC084P03NS3GATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.32 | $0.24 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 30V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TA=25C | 23 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | — |
| Gate Charge QG(0V..10V) | 24 nC | — |
| Output Charge QOSS | 17 nC | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 48 W | — |
| 동작 온도 범위 | -55C to +150C (junction) | -55C to +150C |
| 패키지 | PG-TDSON-8-6 (TDSON-8) | PG-TDSON-8-5 (SuperSO8 5x6) |
| 실장 유형 | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 할로겐 프리 | Yes | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (Ta) | — | 14.9 A |
| Continuous Drain Current (Tc) | — | 78.6 A |
| Rds(on) max @ VGS = -10 V | — | 6.1 mOhm |
| Rds(on) max @ VGS = -2.5 V | — | [DATA_NEEDED: Rds(on) at 2.5V] |
| Gate Threshold Voltage (VGS(th) typ) | — | -1.7 V |
| Total Gate Charge (Qg) | — | 58 nC @ VGS = -10 V |
| Input Capacitance (Ciss) | — | 3.19 nF |
| Output Capacitance (Coss) | — | 110 pF |
| Reverse Transfer Capacitance (Crss) | — | 1.52 nF |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| Technology Family | — | OptiMOS P3 |