BSC093N15NS5ATMA1 vs BSC016N06NSATMA1 Comparación
Comparación detallada lado a lado de BSC093N15NS5ATMA1 por Infineon y BSC016N06NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC093N15NS5ATMA1 - 150V 9.3mΩ 87A OptiMOS 5 N-MOSFET | Infineon
BSC093N15NS5ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | BSC093N15NS5ATMA1 | BSC016N06NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,83 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 150V | OptiMOS™ 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at TC | 87 A | — |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΩ | — |
| Power Dissipation (PD) at TC | 139 W | — |
| Encapsulado | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | 71 nC |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| Sin halógenos | [DATA_NEEDED: halogen free status] | — |
| Product Series | — | OptiMOS™ 5 60V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, TA) | — | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.6 mΩ |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 139 W |
| Gate Drive (recommended) | — | 10 V |