BSC093N15NS5ATMA1 vs BSC016N06NSATMA1 对比
详细并排对比 BSC093N15NS5ATMA1 出自 Infineon 和 BSC016N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC093N15NS5ATMA1 | BSC016N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.83 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 150V | OptiMOS™ 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at TC | 87 A | — |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΩ | — |
| Power Dissipation (PD) at TC | 139 W | — |
| 封装 | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TDSON-8 FL (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | 71 nC |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| 无卤 | [DATA_NEEDED: halogen free status] | — |
| Product Series | — | OptiMOS™ 5 60V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, TA) | — | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.6 mΩ |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 139 W |
| Gate Drive (recommended) | — | 10 V |