BSC117N08NS5ATMA1 vs IPD060N03LGATMA1 Comparación
Comparación detallada lado a lado de BSC117N08NS5ATMA1 por Infineon y IPD060N03LGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC117N08NS5ATMA1 | IPD060N03LGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,46 | $0,20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) max | 49 A (Tc) | — |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 50 W | — |
| Encapsulado | PG-TDSON-8-7 (SuperSO8 5x6) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C (typical MOSFET junction) | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | 1 | 1 (Unlimited) |
| Product Family | — | OptiMOS 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, TC=25C) | — | 50 A |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | — | 200 A |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.7 V |
| On-State Resistance (RDS(on), VGS=10V) | — | 6.0 mOhm (typ) / 7.5 mOhm (max) |
| On-State Resistance (RDS(on), VGS=4.5V) | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg, typ) | — | 21 nC |
| Output Charge (Qoss, typ) | — | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Power Dissipation (PD, TC=25C) | — | 56 W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC, max) | — | 2.5 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | — | 62 C/W |
| Encapsulado / Carcasa | — | PG-TO252-3 (DPAK) |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Packing | — | Tape & Reel (T/R), 2500 per reel |
| AEC-Q101 / Automotive Grade | — | Not qualified |
| Technology / Generation | — | OptiMOS 30V, trench MOSFET |