BSC117N08NS5ATMA1 vs IPD060N03LGATMA1 Comparison
Detailed side-by-side comparison of BSC117N08NS5ATMA1 by Infineon and IPD060N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC117N08NS5ATMA1
BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
BSC117N08NS5ATMA1 β Active
Specification Comparison
| Parameter | BSC117N08NS5ATMA1 | IPD060N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | β |
| Technology | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Continuous Drain Current (ID) max | 49 A (Tc) | β |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 50 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET junction) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 1 | 1 (Unlimited) |
| Product Family | β | OptiMOS 30V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID, TC=25C) | β | 50 A |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | β | 200 A |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Gate Threshold Voltage (VGS(th), typ) | β | 1.7 V |
| On-State Resistance (RDS(on), VGS=10V) | β | 6.0 mOhm (typ) / 7.5 mOhm (max) |
| On-State Resistance (RDS(on), VGS=4.5V) | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg, typ) | β | 21 nC |
| Output Charge (Qoss, typ) | β | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | β | [DATA_NEEDED: Qrr] |
| Power Dissipation (PD, TC=25C) | β | 56 W |
| Operating Junction Temperature | β | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC, max) | β | 2.5 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | β | 62 C/W |
| Package / Case | β | PG-TO252-3 (DPAK) |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Packing | β | Tape & Reel (T/R), 2500 per reel |
| AEC-Q101 / Automotive Grade | β | Not qualified |
| Technology / Generation | β | OptiMOS 30V, trench MOSFET |