BSC12DN20NS3GATMA1 vs BSC190N15NS3GATMA1 Comparación
Comparación detallada lado a lado de BSC12DN20NS3GATMA1 por Infineon y BSC190N15NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ ActivoInfineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC12DN20NS3GATMA1 | BSC190N15NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,61 | $0,98 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 200V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | — |
| Power Dissipation (PD, Tc) | 50 W | — |
| Encapsulado | PG-TDSON-8-5 | PG-TDSON-8-1 (TDSON-8 EP) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -55 C to +150 C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | 2.5 V to 3.5 V |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | OptiMOS power MOSFET | OptiMOS 3 (N-Channel) |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 |
| Configuration | Single N-channel | — |
| Recuento de pines | 8 | — |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | 20 V |
| On-Resistance RDS(on) max at VGS=10V | — | 19 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical at 10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Tc=25C | — | 125 W |