BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
N.º de pieza: BSC190N15NS3GATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.1 | $2,10 |
| 10 | $1.89 | $18,90 |
| 100 | $1.58 | $158,00 |
| 500 | $1.32 | $660,00 |
| 1.000 | $1.15 | $1.150,00 |
| 3.000 | $0.98 | $2.940,00 |
BSC190N15NS3GATMA1 Descripción general
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify electrical signals in power electronics. As an N-channel enhancement-mode device, it conducts when a positive gate-source voltage is applied and blocks when VGS is below the threshold. The OptiMOS 3 family specifically targets high-frequency, high-efficiency switching applications, sitting in the broader taxonomy of power semiconductor -> discrete MOSFET -> N-channel MOSFET -> OptiMOS family. This part occupies the 150V drain-source voltage class and is optimized for synchronous rectification, motor control, and DC-DC conversion in industrial and server power systems.
Key features include a low typical gate charge (Qg) for fast switching, an avalanche-rated single-pulse body diode for inductive switching robustness, and a logic-level compatible gate threshold suitable for 10V gate drive. The PG-TDSON-8-1 package features an exposed drain pad that provides a low thermal resistance path, typically under 1 C/W junction-to-case, enabling high continuous current handling in compact PCB areas.
Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, high-current motor drive half-bridges, solar inverter boost stages, hot-swap and OR-ing controllers in 24V/48V industrial buses, and battery management protection switches. The 150V rating provides ample margin for 100V-bus telecom and 96V battery systems where 100V or 120V competitor parts would be marginal.
Designers should select gate drive voltage and external gate resistors carefully: switching losses scale with Qg and the driver can deliver peak currents of several amps. For high-frequency synchronous rectification, place the gate-drive loop area minimal and use a Kelvin-source connection when available to suppress source-inductance ringing.
Alternativas directas para BSC190N15NS3GATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSC190N15NS3GATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, MSL Level, Drain-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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Ver hoja de datos →IRFS52N15DTRLP
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Ver hoja de datos →IPP120N08S403AKSA1
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Ver hoja de datos →BSC190N15NS3GATMA1 Valores máximos y características eléctricas
| Technology | OptiMOS 3 (N-Channel) |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A |
| Gate-Source Voltage (VGS) max | 20 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm |
| Power Dissipation (PD) at Tc=25C | 125 W |
| Rango de temperatura de funcionamiento | -55 C to +150 C |
| Encapsulado | PG-TDSON-8-1 (TDSON-8 EP) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Nivel MSL | 1 |
Configuración de pines de BSC190N15NS3GATMA1
| Pin 1 | Source — Source terminal (connected to exposed pad) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source terminal |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
| Pin PAD | Drain — Drain terminal via exposed thermal pad |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
BSC190N15NS3GATMA1 es adecuado para 6 aplicacións: 48V Telecom Synchronous Rectification, Industrial Motor Drive Half-Bridge, Solar Micro-Inverter Boost Stage, Server 48V Hot-Swap / OR-ing Controller, Electric Vehicle 24V Auxiliary Battery Switch, Telecom Brick DC-DC Primary Switch.
48V Telecom Synchronous Rectification
The BSC190N15NS3GATMA1 is ideal for 48V telecom bus synchronous rectification stages where efficiency and thermal density are critical. Its 150V VDS rating provides 3x margin above 48V nominal plus typical 100V transients, while the 19 mOhm RDS(on) at VGS=10V keeps conduction loss below 1% at 30A load. The PG-TDSON-8-1 package with low thermal resistance enables compact OR-ing and hot-swap designs. Designers place this MOSFET as the low-side sync-FET on the secondary side of an isolated bus converter, paired with a digital controller. Compared to 100V-rated parts it offers safer transient margin without sacrificing switching speed.
Recomendado
Industrial Motor Drive Half-Bridge
The BSC190N15NS3GATMA1 serves as the high-side or low-side switch in 48V-96V industrial motor drive half-bridges for robotics, AGVs, and servo amplifiers. Its 50A continuous current supports 3-5 kW motor power levels, and the 150V VDS rating tolerates back-EMF spikes from inductive loads. The exposed drain pad provides direct PCB cooling without a heatsink at continuous currents under 15A. A typical configuration places two BSC190N15NS3GATMA1 parts in a totem-pole half-bridge driven by an IR2117STRPBF or similar gate driver, with the low-side sourced from the bus return. The part's low Qg enables 50-100 kHz PWM operation with manageable switching losses.
Recomendado
Solar Micro-Inverter Boost Stage
The BSC190N15NS3GATMA1 works as the main boost switch in micro-inverter and solar charge controller power stages handling 60-100V photovoltaic inputs. Its 150V VDS rating easily covers Voc of 60-cell panels plus cold-temperature overshoot, and the 19 mOhm RDS(on) at 10V gate drive keeps conduction loss low at 20-30A typical operating currents. The OptiMOS 3 process technology gives fast switching edges compatible with 50-100 kHz switching frequency in modern LLC and interleaved boost topologies. Mounting the PG-TDSON-8-1 onto 2 oz copper with thermal vias allows continuous operation without forced-air cooling up to 80C ambient.
Recomendado
Server 48V Hot-Swap / OR-ing Controller
The BSC190N15NS3GATMA1 enables hot-swap insertion and load OR-ing in 48V server backplanes where the part acts as a low-loss disconnect switch. Its 150V VDS rating tolerates ringing from hot-plug events, and the 19 mOhm RDS(on) adds less than 100 mV drop at 50A - significantly better than mechanical relays or Schottky OR-ing diodes. Designers wire this MOSFET in-line with the 48V rail, gate driven by an OR-ing controller IC like the IRF9383MTRPBF. The PG-TDSON-8-1 footprint saves board area versus TO-220 alternatives while the exposed pad provides adequate cooling at steady-state OR-ing currents under 20A.
Recomendado
Electric Vehicle 24V Auxiliary Battery Switch
The BSC190N15NS3GATMA1 functions as a low-side disconnect switch for 12V/24V auxiliary battery management in 48V mild-hybrid and industrial EV applications. Its 150V VDS rating provides exceptional margin above the 24V nominal bus, and the 50A continuous current handles high inrush currents from capacitive loads and 12V starters. The PG-TDSON-8-1 surface-mount package suits PCB-based battery management units where mechanical contactors would be too bulky. Designers place this MOSFET between the battery negative terminal and chassis ground, controlled by a BMS gate driver. Avalanche-rated single-pulse body diode handles reverse-battery protection events.
Recomendado
Telecom Brick DC-DC Primary Switch
The BSC190N15NS3GATMA1 operates as the primary-side switch in 36-75V input telecom brick DC-DC converters up to 500W. Its 150V VDS rating covers the rectified 75V bus with comfortable margin, and the 19 mOhm RDS(on) minimizes conduction loss at 36V input full load. The 50A continuous current handles peak transformer primary currents in 300-500W full-bridge and half-bridge topologies. Designers use this MOSFET in a hard-switched PFC or LLC primary stage driven by a controller like the ICE2QR2280GXUMA1. The PG-TDSON-8-1 package fits well in 1/4-brick and 1/8-brick form factors where power density is critical.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSC190N15NS3GATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSC190N15NS3G | BSC360N15NS3GATMA1 | BSC098N10NS5ATMA1 | BSC070N10NS5ATMA1 | IRFS52N15DTRLP | IPP120N08S403AKSA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-1 | PG-TDSON-8-1 | PG-TDSON-8-1 | PG-TDSON-8-1 | PG-TDSON-8-1 | D2PAK | TO-220-3 |
| VDS max (V) | 150 | 150 | 150 | 100 | 100 | 150 | 80 |
| Continuous ID at Tc=25C (A) | 50 | 50 | 36 | 98 | 70 | 52 | 120 |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | HEXFET | OptiMOS 3 |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Diferenciadores clave
- 40% lower RDS(on) and 45% better FOM vs next-best competitor (frente a IPP120N08S403AKSA1)
- Higher VDS rating (150V) vs OptiMOS 5 100V family (frente a BSC098N10NS5ATMA1)
- Surface-mount PG-TDSON-8-1 vs D2PAK through-hole (frente a IRFS52N15DTRLP)
Notas de diseño
Estimated: At continuous ID=30A with RDS(on)=19 mOhm at 25C junction (rising to ~28 mOhm at 150C), conduction loss is approximately P=I^2*R = 30^2*0.019 = 17.1W (25C) or 25.2W (150C). With PG-TDSON-8-1 thermal resistance of ~0.9 C/W junction-to-case, junction rise above case is P*Rth_jc = 25.2*0.9 = 22.7C at 150C. Copper area on PCB must keep case below 100C for reliable 30A continuous operation; mount to a minimum 25x25mm 2oz copper pour.
Minimize the high-current loop area between the MOSFET drain (exposed pad), the transformer/inductor, and the input bypass capacitors. Use a Kelvin-source connection where the gate-drive return path is separate from the main source current path. Place the gate resistor (typically 4.7-22 ohm) as close to pin 4 as possible to suppress parasitic oscillation. The exposed drain pad must be soldered to the PCB land pattern for both electrical connection and thermal dissipation.
Do not exceed VGS=20V maximum - even brief over-voltage spikes on the gate can damage the thin gate oxide. Add a 10k-100k resistor from gate to source to ensure the MOSFET stays off during controller power-up. Use a gate-drive voltage of 10V (not 12V or 15V) to stay safely below the 20V VGS max. Verify the body diode recovery behavior in bridge topologies; OptiMOS 3 has good but not unlimited reverse-recovery performance. Always reference the manufacturer's application notes for the specific topology.
Use thermal vias under the exposed drain pad to spread heat into inner PCB copper layers. Recommended pattern: array of 4x4 to 6x6 vias at 0.3mm drill, 0.6mm pitch, filled or capped to prevent solder wicking. Keep high-voltage drain traces (up to 150V) away from low-voltage gate trace to avoid coupling. Maintain at least 0.5mm clearance between drain copper and signal traces per IPC-2221 standards for 150V applications.
Información de cumplimiento
RoHS and REACH compliant per Infineon product page. Halogen-free per Infineon's OptiMOS 3 family datasheet. Not AEC-Q100 qualified - select automotive-grade OptiMOS parts (e.g., IPB025N10N3G) for automotive applications. Conflict-minerals statement available on Infineon corporate responsibility page.
