BSC190N15NS3GATMA1 vs IRFS52N15DTRLP Comparación
Comparación detallada lado a lado de BSC190N15NS3GATMA1 por Infineon y IRFS52N15DTRLP por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | BSC190N15NS3GATMA1 | IRFS52N15DTRLP |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,98 | $1,62 |
| Technology | OptiMOS 3 (N-Channel) | HEXFET (Planar) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V | 2.0 V to 4.0 V (typical 3 V) |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | — |
| On-Resistance RDS(on) typ at VGS=10V | [DATA_NEEDED: RDS(on) typical at 10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: total gate charge in nC] |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C | -55 C to +175 C (junction) |
| Encapsulado | PG-TDSON-8-1 (TDSON-8 EP) | D2PAK (TO-263) surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020, typical for D2PAK) |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | — | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | — | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | — | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | — | 32 mOhm |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd in nC] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss in pF] |
| Power Dissipation (Pd) @ TC = 25 C | — | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | — | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA in C/W] |
| Recuento de pines | — | 3 (Gate, Drain, Source) + tab |
| Lead-Free Finish | — | Yes (matte tin) |