BSC265N10LSFGATMA1 vs BSC146N10LS5ATMA1 Comparación
Comparación detallada lado a lado de BSC265N10LSFGATMA1 por Infineon y BSC146N10LS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | BSC265N10LSFGATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $0,74 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | 6.5 A | — |
| Power Dissipation (PD, Tc) | 78 W | — |
| Technology | OptiMOS 2 (TrenchFET) | OptiMOS 5 (logic-level) |
| Encapsulado | PG-TDSON-8-1 (TDSON-8) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | Logic-level (typ. ~1.7 V) |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C (junction) | -55 C to +150 C (TJ max) |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| Series | OptiMOS 2 | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 44 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS] |