BSC265N10LSFGATMA1 vs BSC146N10LS5ATMA1 Comparison
Detailed side-by-side comparison of BSC265N10LSFGATMA1 by Infineon and BSC146N10LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 β ActiveInfineon
BSC146N10LS5ATMA1
BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
BSC146N10LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC265N10LSFGATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $0.74 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc) | 40 A | β |
| Continuous Drain Current (ID, Ta) | 6.5 A | β |
| Power Dissipation (PD, Tc) | 78 W | β |
| Technology | OptiMOS 2 (TrenchFET) | OptiMOS 5 (logic-level) |
| Package | PG-TDSON-8-1 (TDSON-8) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | Logic-level (typ. ~1.7 V) |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total at VGS=10V] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55 C to +150 C (TJ max) |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Avalanche Rated | Yes | β |
| Series | OptiMOS 2 | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | β | 44 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | β | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 52 W |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS] |