BSC360N15NS3GATMA1 vs BSC097N06NSATMA1 Comparación
Comparación detallada lado a lado de BSC360N15NS3GATMA1 por Infineon y BSC097N06NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon
BSC360N15NS3GATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | BSC360N15NS3GATMA1 | BSC097N06NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC360N15NS3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | — |
| Power Dissipation (PD) at Tc | 74 W | — |
| Gate Threshold Voltage (VGS th) typ | 3.0 V | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Encapsulado | PG-TDSON-8-1 (SuperSO8, 5x6 mm) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55°C to +150°C (junction) | — |
| Avalanche Energy Rated | Yes | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | 1 | 1 (Unlimited) |
| Series | — | OptiMOS 5 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 46 A |
| Continuous Drain Current (ID) at Ta=25C | — | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM peak value] |
| RDS(on) max at VGS=10 V | — | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 36 W |
| Temperatura de unión de funcionamiento | — | -55C to +150C |
| Encapsulado / Carcasa | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Avalanche Rated | — | Yes (EAS per datasheet) |