BSC360N15NS3GATMA1 vs BSC097N06NSATMA1 对比

详细并排对比 BSC360N15NS3GATMA1 出自 Infineon 和 BSC097N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC097N06NSATMA1 BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 ✓ 量产中

规格对比

参数 BSC360N15NS3GATMA1 BSC097N06NSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.38
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC360N15NS3GATMA1 —
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS 5 (Trench)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Tc 33 A —
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Power Dissipation (PD) at Tc 74 W —
Gate Threshold Voltage (VGS th) typ 3.0 V —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
封装 PG-TDSON-8-1 (SuperSO8, 5x6 mm) —
安装类型 Surface Mount Surface Mount
工作温度范围 -55°C to +150°C (junction) —
Avalanche Energy Rated Yes —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
MSL 等级 1 1 (Unlimited)
Series — OptiMOS 5
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 46 A
Continuous Drain Current (ID) at Ta=25C — [DATA_NEEDED: ID at Ta=25C PCB-mounted]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM peak value]
RDS(on) max at VGS=10 V — 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 36 W
工作结温 — -55C to +150C
封装 / 外壳 — PG-TDSON-8-6 (SuperSO8 5x6 mm)
Avalanche Rated — Yes (EAS per datasheet)

数据手册与资源

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