BSD214SNH6327XTSA1 vs BSP92PH6327XTSA1 Comparación
Comparación detallada lado a lado de BSD214SNH6327XTSA1 por Infineon y BSP92PH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSP92PH6327XTSA1 - P-Channel 250V 260mA MOSFET SOT-223 | Infineon
BSP92PH6327XTSA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSD214SNH6327XTSA1 | BSP92PH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,27 | $0,31 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS | — |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) at 25C | 1.5 A | — |
| Power Dissipation (Pd) at Ta | 500 mW | — |
| Gate Drive Voltage (Rds On rated) | 2.5 V, 4.5 V | — |
| Rds On (Max) @ Vgs=4.5V | [DATA_NEEDED: Rds On at Vgs=4.5V] | — |
| Rds On (Max) @ Vgs=2.5V | [DATA_NEEDED: Rds On at Vgs=2.5V] | — |
| Vgs(th) (typical) | [DATA_NEEDED: Vgs threshold typical] | — |
| Encapsulado | SOT-363 (PG-SOT363-PO), 6-pin | PG-SOT223-4 (SOT-223-4) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 | 1 (unlimited) |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS P-Channel Small-Signal Power MOSFET |
| Tipo de transistor | — | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | -250 V |
| Continuous Drain Current (ID) | — | -260 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Channel Polarity | — | P-Channel |
| Temperatura de funcionamiento | — | -55C to +150C (Tj) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | — | Yes / Compliant |
| Recuento de pines | — | 4 (Gate, Drain, Drain, Source) |