BSF134N10NJ3GXUMA1 vs BSF134N10NJ3GXUMA2 Comparación
Comparación detallada lado a lado de BSF134N10NJ3GXUMA1 por Infineon y BSF134N10NJ3GXUMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSF134N10NJ3GXUMA1 | BSF134N10NJ3GXUMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $0,54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | OptiMOS 100V |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 9 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| Power Dissipation (PD) at TA=25°C | 2.2 W | — |
| Power Dissipation (PD) at TC=25°C | 43 W | — |
| Encapsulado | MG-WDSON-2 (CanPAK M) | MG-WDSON-2 (surface mount, CanPAK-like) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Terminal Position | Bottom | — |
| Terminal Finish | Silver Nickel | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Technology | Trench-gate OptiMOS planar | OptiMOS 100V (low RDS(on), fast switching) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | — |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 9 A |
| Continuous Drain Current (ID) at Tc | — | 40 A |
| Power Dissipation (PD) at Ta | — | 2.2 W |
| Power Dissipation (PD) at Tc | — | 43 W |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement-mode |
| Primary Applications | — | SMPS, motor control, solar, telecom/datacom DC-DC |