BSF134N10NJ3GXUMA2 vs BSF134N10NJ3GXUMA1 Comparación
Comparación detallada lado a lado de BSF134N10NJ3GXUMA2 por Infineon y BSF134N10NJ3GXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSF134N10NJ3GXUMA2 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,54 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100V | OptiMOS 100 V |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Ta | 9 A | — |
| Continuous Drain Current (ID) at Tc | 40 A | — |
| Power Dissipation (PD) at Ta | 2.2 W | — |
| Power Dissipation (PD) at Tc | 43 W | — |
| Encapsulado | MG-WDSON-2 (surface mount, CanPAK-like) | MG-WDSON-2 (CanPAK M) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 100V (low RDS(on), fast switching) | Trench-gate OptiMOS planar |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement-mode | — |
| Estado RoHS | Compliant | Compliant |
| Primary Applications | SMPS, motor control, solar, telecom/datacom DC-DC | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 9 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| Power Dissipation (PD) at TA=25°C | — | 2.2 W |
| Power Dissipation (PD) at TC=25°C | — | 43 W |
| Configuration | — | Single with built-in diode |
| Terminal Position | — | Bottom |
| Terminal Finish | — | Silver Nickel |
| Rango de temperatura de funcionamiento | — | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | — | [DATA_NEEDED: trr value] |