BSS123IXTSA1 vs BSS123NH6327XTSA1 Comparación
Comparación detallada lado a lado de BSS123IXTSA1 por Infineon y BSS123NH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSS123IXTSA1 | BSS123NH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,11 | $0,09 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS Small-Signal | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | 190 mA | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| RDS(on) (typical, VGS=10 V) | 2.4 ohm | — |
| RDS(on) (max per family datasheet) | 6 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: typical and max VGS(th)] |
| Encapsulado | PG-SOT-23-3 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C (per family datasheet) | -55 °C to +150 °C (junction) |
| Qualification | Industrial | AEC-Q101 (automotive) |
| Configuration | Single N-Channel | — |
| Lead-Free / RoHS | Yes (per distributor listing) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Gate Drive Logic Level | Logic-level compatible | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS123NH6327XTSA1 |
| Part Status | — | Active |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) | — | 190 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| RDS(on) Max | — | 6 Ω @ VGS = 10 V |
| Gate-Source Voltage Max (VGS) | — | ±20 V |
| RoHS Compliance | — | Yes (Pb-free lead plating) |