BSS123IXTSA1 vs BSS123NH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS123IXTSA1 by Infineon and BSS123NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS123IXTSA1 | BSS123NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Technology | OptiMOS Small-Signal | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | 190 mA | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| RDS(on) (typical, VGS=10 V) | 2.4 ohm | — |
| RDS(on) (max per family datasheet) | 6 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: typical and max VGS(th)] |
| Package | PG-SOT-23-3 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (per family datasheet) | -55 °C to +150 °C (junction) |
| Qualification | Industrial | AEC-Q101 (automotive) |
| Configuration | Single N-Channel | — |
| Lead-Free / RoHS | Yes (per distributor listing) | — |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Gate Drive Logic Level | Logic-level compatible | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS123NH6327XTSA1 |
| Part Status | — | Active |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) | — | 190 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| RDS(on) Max | — | 6 Ω @ VGS = 10 V |
| Gate-Source Voltage Max (VGS) | — | ±20 V |
| RoHS Compliance | — | Yes (Pb-free lead plating) |