BSS205NH6327XTSA1 vs IRF7832TRPBF Comparación
Comparación detallada lado a lado de BSS205NH6327XTSA1 por Infineon y IRF7832TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSS205NH6327XTSA1 | IRF7832TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,12 | $0,92 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | BSS205NH6327XTSA1 | IRF7832TRPBF |
| Tipo de transistor | N-Channel MOSFET | — |
| Encapsulado | PG-SOT23 (SC-59, TO-236-3), 3-pin | 8-SO (SOIC-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Drain-Source Voltage V<sub>DS</sub> | 20 V | — |
| Continuous Drain Current I<sub>D</sub> (Ta) | 2.5 A | — |
| Power Dissipation P<sub>D</sub> (Ta) | 500 mW | — |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) | 85 mΩ | — |
| Gate Threshold V<sub>GS(th)</sub> | [DATA_NEEDED: Vgs(th) typical value] | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (junction) | -55 C to +150 C (TJ) |
| Gate Drive Voltage | Logic-level compatible | — |
| Qualification | AEC-Q101 | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | — |
| Packaging | Tape & Reel (H6327) | — |
| FET Type | — | N-Channel |
| Technology | — | HEXFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | — | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | — | 34 nC |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |