BSS205NH6327XTSA1 vs IRF7832TRPBF 对比
详细并排对比 BSS205NH6327XTSA1 出自 Infineon 和 IRF7832TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS205NH6327XTSA1 | IRF7832TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.12 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | BSS205NH6327XTSA1 | IRF7832TRPBF |
| 晶体管类型 | N-Channel MOSFET | — |
| 封装 | PG-SOT23 (SC-59, TO-236-3), 3-pin | 8-SO (SOIC-8) |
| 安装类型 | Surface Mount | Surface Mount |
| Drain-Source Voltage V<sub>DS</sub> | 20 V | — |
| Continuous Drain Current I<sub>D</sub> (Ta) | 2.5 A | — |
| Power Dissipation P<sub>D</sub> (Ta) | 500 mW | — |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) | 85 mΩ | — |
| Gate Threshold V<sub>GS(th)</sub> | [DATA_NEEDED: Vgs(th) typical value] | — |
| 工作温度范围 | -55 °C to +150 °C (junction) | -55 C to +150 C (TJ) |
| Gate Drive Voltage | Logic-level compatible | — |
| Qualification | AEC-Q101 | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | — |
| Packaging | Tape & Reel (H6327) | — |
| FET Type | — | N-Channel |
| Technology | — | HEXFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | — | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | — | 34 nC |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |