BSS84PH6327XTSA2 vs IRLML5103TRPBF Comparación
Comparación detallada lado a lado de BSS84PH6327XTSA2 por Infineon y IRLML5103TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSS84PH6327XTSA2 | IRLML5103TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,10 | $0,05 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS84PH6327XTSA2 | — |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) | -170 mA (Ta) | — |
| Power Dissipation (PD) | 360 mW (Ta) | — |
| On-State Resistance (RDS(on)) max | 8 ohm at VGS = -10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| Gate-to-Source Voltage (VGS) | +/-20 V | — |
| Encapsulado | PG-SOT23 (SOT-23-3) | Micro3/SOT-23 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55C to +150C | 175 C |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology Family | SIPMOS OptiMOS | — |
| Polarity | P-Channel Enhancement Mode | P-Channel |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Tipo de transistor | — | P-Channel MOSFET |
| Maximum Drain-Source Voltage | — | 30 V |
| Continuous Drain Current | — | 760 mA at Ta |
| Power Dissipation | — | 540 mW at Ta |
| Maximum On-Resistance | — | 600 mOhm |
| Gate Charge | — | 3.4 nC |
| Technology | — | IR MOSFET |
| Drain-Source Voltage Rating | — | -30 V |
| Channel Mode | — | Enhancement |
| Footprint | — | SOT-23 |