BSZ017NE2LS5IATMA1 vs BSZ036NE2LSATMA1 Comparación
Comparación detallada lado a lado de BSZ017NE2LS5IATMA1 por Infineon y BSZ036NE2LSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSZ017NE2LS5IATMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,64 | $0,42 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (TA) | 27 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΩ | — |
| On-Resistance Test Current | 20 A | — |
| Gate-Source Voltage (VGS) Rating | ±16 V | — |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 µA | — |
| Total Gate Charge Qg | 30 nC @ VGS=10V | — |
| Input Capacitance Ciss | 2000 pF @ VDS=12V | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 50 W | — |
| Temperatura de unión de funcionamiento | -55°C to +150°C | — |
| Encapsulado | PG-TSDSON-8-FL (8-PowerTDFN) | PG-TSDSON-8-FL (5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Series / Family | OptiMOS 5 25V | — |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 25V |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 16 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 37 W |
| Configuration | — | Single |
| Rango de temperatura de funcionamiento | — | -55C to +150C |
| Nivel MSL | — | 1 (Unlimited) |
| Lead-Free | — | Yes |
| Gate Drive | — | Logic-level compatible |