BSZ017NE2LS5IATMA1 vs IPB027N10N3GATMA1 Comparación
Comparación detallada lado a lado de BSZ017NE2LS5IATMA1 por Infineon y IPB027N10N3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSZ017NE2LS5IATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,64 | $1,62 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (TA) | 27 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΩ | — |
| On-Resistance Test Current | 20 A | — |
| Gate-Source Voltage (VGS) Rating | ±16 V | — |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 µA | — |
| Total Gate Charge Qg | 30 nC @ VGS=10V | — |
| Input Capacitance Ciss | 2000 pF @ VDS=12V | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 50 W | — |
| Temperatura de unión de funcionamiento | -55°C to +150°C | — |
| Encapsulado | PG-TSDSON-8-FL (8-PowerTDFN) | PG-TO263-3 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Series / Family | OptiMOS 5 25V | — |
| Estado RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 3 (Trench MOSFET) |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Rango de temperatura de funcionamiento | — | -55°C to +175°C (TJ) |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| Nivel MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg at VGS=10V] |