BSZ031NE2LS5ATMA1 vs BSZ017NE2LS5IATMA1 Comparación
Comparación detallada lado a lado de BSZ031NE2LS5ATMA1 por Infineon y BSZ017NE2LS5IATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | BSZ031NE2LS5ATMA1 | BSZ017NE2LS5IATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,26 | $0,64 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ031NE2LS5ATMA1 | — |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | — |
| Drain-Source Voltage (VDS) max | 25 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta=25C | 19 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | — |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 30 W | — |
| Temperatura de unión de funcionamiento | -55 C to +150 C | -55°C to +150°C |
| Encapsulado | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (8-PowerTDFN) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL] | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Sin halógenos | Yes | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (TA) | — | 27 A |
| Continuous Drain Current (TC) | — | 40 A |
| On-Resistance RDS(on) @ VGS=10V | — | 1.7 mΩ |
| On-Resistance Test Current | — | 20 A |
| Gate-Source Voltage (VGS) Rating | — | ±16 V |
| Gate Threshold Voltage VGS(th) | — | 2 V @ 250 µA |
| Total Gate Charge Qg | — | 30 nC @ VGS=10V |
| Input Capacitance Ciss | — | 2000 pF @ VDS=12V |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 50 W |
| Series / Family | — | OptiMOS 5 25V |