BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
N.º de pieza: BSZ031NE2LS5ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.55 | $5,50 |
| 100 | $0.42 | $42,00 |
| 500 | $0.36 | $180,00 |
| 1.000 | $0.31 | $310,00 |
| 3.000 | $0.26 | $780,00 |
BSZ031NE2LS5ATMA1 Descripción general
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of a p-type body region to create an n-type conduction channel between source and drain. Within the broader semiconductor taxonomy, this places the BSZ031NE2LS5ATMA1 in the power MOSFET family, which sits under discrete semiconductors and ultimately within power electronics. OptiMOS 5 specifically refers to Infineon's fifth-generation trench MOSFET process, which reduces Rds(on) x Qg figure-of-merit, shrinks die size, and lowers switching losses versus earlier OptiMOS generations.
Key electrical features include a 25 V drain-source breakdown voltage, an ultra-low typical Rds(on) of approximately 3.1 mOhm at VGS=10 V, and a thermally enhanced exposed-pad package with PG-TSDSON-8-FL land pattern. The part is rated for 2.1 W continuous dissipation at ambient (Ta) and up to 30 W with case temperature controlled at 25 C, making it suitable for high-current-density point-of-load converters and USB-PD sink paths. The OptiMOS 5 process also delivers low gate charge Qg and reduced Q<sub>rr</sub>, supporting MHz-class switching frequencies.
Typical applications include synchronous rectification in 12 V buck converters for server/telecom POL rails, high-side/low-side switches in USB Power Delivery and Type-C adapters, battery management protection FETs in 1S-2S lithium packs, motor drive H-bridges in 12 V brushless systems, and OR-ing switches for redundant 12/24 V power rails. The combination of low Rds(on) and small footprint makes it particularly attractive when PCB area is constrained and conduction loss dominates the thermal budget.
When designing with this part, ensure that VGS is driven with a true 10 V rail (logic-level 3.3 V drive alone will not fully enhance the channel) and place the gate driver within 5 mm of the gate pin to minimize parasitic inductance. The exposed thermal pad must be soldered to a sufficiently large copper pour - typically at least 100 mm^2 on each side of the part - to achieve the rated continuous drain current without exceeding the 150 C maximum junction temperature.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS 5 family, and practical layout notes not aggregated in the manufacturer datasheet alone.
Alternativas directas para BSZ031NE2LS5ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSZ031NE2LS5ATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, MSL Level, Part Number, Drain-Source Voltage (VDS).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSZ017NE2LS5IATMA1
✅ Sustitución directa✓ En stock
$0.64 / unidad
Ver hoja de datos →BSZ034NE2LS5IATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
BSZ0501NSIATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.29 / unidad
Ver hoja de datos →BSC098N10NS5ATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.55 / unidad
Ver hoja de datos →BSC014N04LSATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.74 / unidad
Ver hoja de datos →BSC0501NSIATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.65 / unidad
Ver hoja de datos →BSZ031NE2LS5ATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Part Number | BSZ031NE2LS5ATMA1 |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 19 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A |
| RDS(on) max @ VGS=10 V | 3.1 mOhm |
| Power Dissipation at Ta=25C | 2.1 W |
| Power Dissipation at Tc=25C | 30 W |
| Temperatura de unión de funcionamiento | -55 C to +150 C |
| Encapsulado | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
| Sin halógenos | Yes |
Configuración de pines de BSZ031NE2LS5ATMA1
| Pin 1 | Source — Source terminal |
| Pin 2 | Source — Source terminal (electrically connected to pin 1) |
| Pin 3 | Gate — Gate terminal |
| Pin 4 | Source — Source terminal |
| Pin 5 | Drain — Drain terminal |
| Pin 6 | Drain — Drain terminal |
| Pin 7 | Drain — Drain terminal |
| Pin 8 | Drain — Drain terminal |
Área de funcionamiento seguro (BSZ031NE2LS5)
Aplicaciones típicas
BSZ031NE2LS5ATMA1 es adecuado para 6 aplicacións: Synchronous Rectification in 12 V POL Converters, USB Power Delivery (USB-PD) Adapter Outputs, 1S-2S Lithium Battery Pack Protection FET, 12 V Brushless DC (BLDC) Motor Drive H-Bridge, 12 V / 24 V Redundant Rail OR-ing Switch, Hot-Swap / E-Fuse for 12 V Distribution.
Synchronous Rectification in 12 V POL Converters
The BSZ031NE2LS5ATMA1 is a strong fit as the low-side synchronous rectifier in 12 V input, 1 V to 5 V output buck converters for server and telecom POL rails. Its 3.1 mOhm max RDS(on) keeps conduction loss P = ID^2 x Rds(on) low - at 15 A the loss is roughly 0.7 W per device, supporting 96%+ peak efficiency. The OptiMOS 5 process also delivers low Qrr, which minimizes dead-time loss in CCM operation and improves light-load efficiency in DCM/forced-PFM modes. Use a 10 V gate drive to fully enhance the channel and place the gate driver within 5 mm of the gate pin.
Recomendado
USB Power Delivery (USB-PD) Adapter Outputs
The BSZ031NE2LS5ATMA1 is well-suited as the synchronous switch in USB-PD adapters delivering 5 V to 20 V at up to 5 A (100 W). Its 25 V VDS rating covers 20 V PD outputs plus transient margin for hot-plug and cable-fault events, while the 3.1 mOhm RDS(on) sustains high efficiency across the full PD voltage range. The compact 3.3 x 3.3 mm PQFN footprint enables high-power-density layouts required by modern GaN-competitive silicon designs. Recommended for adapter primary-side sync-FET and secondary-side rectification when paired with a USB-PD controller.
Recomendado
1S-2S Lithium Battery Pack Protection FET
The BSZ031NE2LS5ATMA1 functions as the high-side or low-side protection FET in 1S-2S lithium battery packs where its 25 V VDS is comfortably above the 8.4 V maximum charge voltage of a 2S pack. The 3.1 mOhm RDS(on) keeps the voltage drop low during high discharge pulses (reducing pack heat rise by I^2xR) and the small footprint saves PCB in space-constrained pack designs. Built-in avalanche ruggedness from the OptiMOS 5 trench process tolerates the inductive kickback when the protection FET opens under fault conditions.
Recomendado
12 V Brushless DC (BLDC) Motor Drive H-Bridge
The BSZ031NE2LS5ATMA1 works as a low-side switch in 12 V BLDC motor drive H-bridges for fans, pumps, and small robotics. Its 19 A continuous TA rating and 3.1 mOhm RDS(on) deliver low conduction loss at typical motor currents of 5-10 A, while the small PQFN footprint allows four FETs to fit under a single BGA-style footprint. The fast switching speed of OptiMOS 5 minimizes dead-time and shoot-through risk when paired with proper gate driver timing. Suited to 3-phase sensorless or Hall-sensored BLDC topologies.
Recomendado
12 V / 24 V Redundant Rail OR-ing Switch
The BSZ031NE2LS5ATMA1 functions as an OR-ing switch between two redundant 12 V or 24 V supplies in telecom and server power systems, where its 25 V VDS handles 24 V nominal plus transient margin. The low Rds(on) minimizes voltage drop across the FET (preserving load voltage regulation) and reduces power dissipation versus a Schottky diode solution. The fast body-FET switching characteristic, combined with an external gate control circuit, enables sub-millisecond switchover between rails during a PSU failure event.
Recomendado
Hot-Swap / E-Fuse for 12 V Distribution
The BSZ031NE2LS5ATMA1 is a drop-in N-channel FET for the pass element of a 12 V hot-swap or e-fuse circuit, protecting downstream loads from inrush transients and short circuits. The 25 V VDS withstands 12 V nominal plus margin, while the 3.1 mOhm RDS(on) keeps the on-state voltage drop below 50 mV at 15 A. The SOA of the OptiMOS 5 device tolerates high inrush currents during capacitor charge-up, allowing designers to build compact 12 V e-fuses for server backplanes and industrial PLCs.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSZ031NE2LS5ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSZ017NE2LS5IATMA1 | BSZ034NE2LS5IATMA1 | BSZ0501NSIATMA1 | BSC098N10NS5ATMA1 | BSC014N04LSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-FL (3.3x3.3 mm) | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same |
| VDS max | 25 V | 25 V | 25 V | 30 V | 100 V | 40 V |
| RDS(on) max @ VGS=10V | 3.1 mOhm | 1.7 mOhm | 3.4 mOhm | 5.0 mOhm | 9.8 mOhm | 1.4 mOhm |
| Technology | OptiMOS 5 25V/30V | OptiMOS 5 25V | OptiMOS 5 25V | OptiMOS 5 | OptiMOS 5 100V | OptiMOS 5 |
| Drop-in Compatibility | Reference | Yes (lower RDS(on)) | Yes (slightly higher RDS(on)) | Yes (different VDS class) | Yes (different VDS class) | Yes (different VDS class) |
Diferenciadores clave
- Lower RDS(on) than same-package predecessors (frente a BSC0501NSIATMA1)
- Optimized OptiMOS 5 25V/30V process tier (frente a BSC098N10NS5ATMA1 (100V OptiMOS 5))
- Footprint compatibility with broader Infineon PQFN 3.3 x 3.3 family (frente a BSZ017NE2LS5IATMA1)
Notas de diseño
At continuous ID=19 A in TA=25°C free air with PD=2.1 W, the BSZ031NE2LS5ATMA1 must be de-rated against junction temperature using the datasheet's Diagram 2 thermal curve. Estimated: with a 4-layer PCB and 1 oz copper on each layer plus ~100 mm^2 thermal pad pour, the steady-state junction-to-ambient thermal resistance is approximately 50 C/W, allowing roughly 2.5 W continuous dissipation before TJ approaches 150°C. For full 40 A TC rating, the part must be soldered to a copper area that holds TC at or below 25°C (infinite-heatsink assumption per the datasheet).
Per the Infineon PG-TSDSON-8-FL land pattern recommendation, route all four drain pins (5-8) into a single copper pour that also serves as the thermal pad. Place the gate driver within 5 mm of pin 3 (Gate) to minimize gate-loop parasitic inductance; long gate traces cause ringing and can exceed the VGS absolute-max rating of ±20 V. Use a 10 V gate-drive supply - logic-level 3.3 V or 5 V drives will not fully enhance the channel and Rds(on) rises 2-3x.
Do not exceed the 25 V VDS rating under transient conditions; inductive kickback from a switching load must be clamped with a TVS or RC snubber, or the part will avalanche and degrade. The BSZ031NE2LS5ATMA1 is avalanche-rated, but sustained operation outside SOA will reduce lifetime. Also note that the part's source pins (1, 2, 4) are internally bonded and should all be soldered; missing a source pin forces the entire ID through the remaining pins, increasing current density and Rds(on) hot-spot.
Información de cumplimiento
RoHS compliant per Infineon product page and DigiKey listing. Not AEC-Q100 qualified - this is a commercial/industrial grade part. Halogen-free and lead-free reflow compatible per JEDEC J-STD-020.
