EP1C6F25617L vs EP1C12F256C8N Comparación
Comparación detallada lado a lado de EP1C6F25617L por Altera y EP1C12F256C8N por Altera. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP1C6F25617L | EP1C12F256C8N |
|---|---|---|
| Marca | Altera | Altera |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $26,40 | $15,10 |
| Family | Cyclone | Cyclone I |
| Logic Elements | 5,980 LE | — |
| Total RAM Bits | 92,160 bits (90 Kbits) | — |
| Embedded RAM Blocks | M4K blocks (20 blocks) | — |
| User I/O Pins (max) | 185 | — |
| PLLs | 2 | 2 |
| Global Clock Networks | 8 | — |
| Encapsulado | 256-pin FineLine BGA (FBGA-256) | 256-ball FBGA (FineLine BGA), 17x17 mm, 1.0 mm pitch |
| Speed Grade | -7 | C8 (commercial, -8) |
| Core Voltage | 1.7 V (L variant) | — |
| I/O Voltage | 3.3 V | — |
| Temperatura de funcionamiento | 0C to +85C (commercial) | — |
| Configuration Mode | Active Serial (AS), Passive Serial (PS), JTAG | — |
| Process Technology | 130 nm SRAM | 0.13-µm, all-layer copper SRAM |
| Estado RoHS | Compliant (L suffix indicates lead-free) | — |
| Logic Elements (LEs) | — | 12,060 |
| Total Memory Bits | — | 239,616 bits |
| Embedded Memory Blocks | — | 52 M4K (4,608 bits each) |
| Maximum User I/Os | — | 185 |
| Core Supply Voltage | — | 1.5 V |
| Lead-Free / Pb-Free Suffix | — | Yes (N suffix) |
| Maximum Internal Operating Frequency | — | up to 275.03 MHz |
| Operating Temperature (commercial) | — | 0C to +85C |
| Configuration Method | — | Active Serial, Active Parallel, Passive Serial, JTAG |
| Tipo de montaje | — | Surface Mount (BGA) |