EP2A15F672C9N vs EP2A15B724C9 Comparación
Comparación detallada lado a lado de EP2A15F672C9N por Intel y EP2A15B724C9 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP2A15F672C9N | EP2A15B724C9 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | NRND | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $155,00 | $268,50 |
| Logic Family | APEX II (CMOS) | — |
| Series | Altera APEX II (EP2A) | APEX II |
| Logic Elements / Cells | 16,640 | — |
| Equivalent Gates | 600,000 | — |
| Maximum User I/O Pins | 492 | — |
| Propagation Delay | 1.94 ns | — |
| Internal Operating Frequency (max) | 379 MHz | — |
| Technology Process | 0.15 µm all-layer copper CMOS, up to 8 metal layers | — |
| Core Supply Voltage | 1.5 V | — |
| Encapsulado | 672-ball FC-FBGA (27 x 27 mm, 1 mm pitch, FineLine BGA) | 724-ball FCBGA (Fine-pitch Chip-Scale BGA) |
| Temperatura de funcionamiento | 0°C to +85°C (commercial grade) | Commercial (0 °C to +85 °C) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 3 (per FC-FBGA moisture sensitivity, typical) | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Lead-Free / Halogen-Free | [DATA_NEEDED: lead-free status] | — |
| I/O Speed Grade | Up to 1 Gbps (LVDS) | — |
| Embedded Memory | Embedded dual-port RAM blocks | — |
| Special Blocks | CAM (Content-Addressable Memory), dedicated multipliers, PLLs | — |
| Speed Grade | C9 (fastest commercial grade in the APEX II speed-grade system) | — |
| Family | — | APEX II (EP2A15) |
| Logic Elements | — | 16640 |
| Number of Gates | — | 600000 |
| Embedded Memory (RAM bits) | — | 425984 |
| User I/O Count | — | 492 |
| Supply Voltage (Core) | — | 1.5 V |
| I/O Voltages Supported | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V (MultiVolt I/O) |
| Process Technology | — | 0.15 µm all-layer copper (up to 8 metal layers) |
| Maximum Internal Frequency | — | 500 MHz |
| LVDS Data Rate | — | Up to 1 Gbps (True-LVDS) |
| Interface Standards | — | LVDS, LVPECL, PCML, HyperTransport |
| Embedded Memory Type | — | ESB - dual-port RAM / ROM / FIFO / CAM |
| Clock Management | — | On-chip PLLs |