EP2A15F672C9N vs EP2A15B724C9 Comparaison
Comparaison détaillée côte à côte de EP2A15F672C9N par Intel et EP2A15B724C9 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP2A15F672C9N | EP2A15B724C9 |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | NRND | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $155,00 | $268,50 |
| Logic Family | APEX II (CMOS) | — |
| Series | Altera APEX II (EP2A) | APEX II |
| Logic Elements / Cells | 16,640 | — |
| Equivalent Gates | 600,000 | — |
| Maximum User I/O Pins | 492 | — |
| Propagation Delay | 1.94 ns | — |
| Internal Operating Frequency (max) | 379 MHz | — |
| Technology Process | 0.15 µm all-layer copper CMOS, up to 8 metal layers | — |
| Core Supply Voltage | 1.5 V | — |
| Boîtier | 672-ball FC-FBGA (27 x 27 mm, 1 mm pitch, FineLine BGA) | 724-ball FCBGA (Fine-pitch Chip-Scale BGA) |
| Température de fonctionnement | 0°C to +85°C (commercial grade) | Commercial (0 °C to +85 °C) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 3 (per FC-FBGA moisture sensitivity, typical) | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Lead-Free / Halogen-Free | [DATA_NEEDED: lead-free status] | — |
| I/O Speed Grade | Up to 1 Gbps (LVDS) | — |
| Embedded Memory | Embedded dual-port RAM blocks | — |
| Special Blocks | CAM (Content-Addressable Memory), dedicated multipliers, PLLs | — |
| Speed Grade | C9 (fastest commercial grade in the APEX II speed-grade system) | — |
| Family | — | APEX II (EP2A15) |
| Logic Elements | — | 16640 |
| Number of Gates | — | 600000 |
| Embedded Memory (RAM bits) | — | 425984 |
| User I/O Count | — | 492 |
| Supply Voltage (Core) | — | 1.5 V |
| I/O Voltages Supported | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V (MultiVolt I/O) |
| Process Technology | — | 0.15 µm all-layer copper (up to 8 metal layers) |
| Maximum Internal Frequency | — | 500 MHz |
| LVDS Data Rate | — | Up to 1 Gbps (True-LVDS) |
| Interface Standards | — | LVDS, LVPECL, PCML, HyperTransport |
| Embedded Memory Type | — | ESB - dual-port RAM / ROM / FIFO / CAM |
| Clock Management | — | On-chip PLLs |